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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202301876
|2 doi
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|a pubmed24n1184.xml
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|a (NLM)37022284
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|a DE-627
|b ger
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|e rakwb
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|a eng
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| 100 |
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|a Li, Peihui
|e verfasserin
|4 aut
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| 245 |
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|a Exploring Electronic Characteristics of Acceptor-Donor-Acceptor-Type Molecules by Single-Molecule Charge Transport
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|c 2023
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|a Text
|b txt
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 17.07.2023
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|a Date Revised 18.07.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a The electronic characteristics of organic optoelectronic materials determine the performance of corresponding devices. Clarifying the relationship between molecular structure and electronic characteristics at the single-molecule level can help to achieve high performance for organic optoelectronic materials and devices, especially for organic photovoltaics. In this work, a typical acceptor-donor-acceptor (A-D-A)-type molecule is explored by combining theoretical and experimental studies to reveal the intrinsic electronic characteristics at the single-molecule level. Specifically, the A-D-A-type molecule with 1,1-dicyano methylene-3-indanone (INCN) acceptor units exhibits an enhanced conductance in single-molecule junctions when compared with the control donor molecule, because the acceptor units of the A-D-A-type molecule contribute additional transport channels. In addition, through opening the S∙∙∙O noncovalent conformational lock by protonation to expose the -S anchoring sites, the charge transport of the D central part is detected, proving that the conductive orbitals contributed by the INCN acceptor groups can penetrate the whole A-D-A molecule. These results provide important insights into the development of high-performance organic optoelectronic materials and devices toward practical applications
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|a Journal Article
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|a A-D-A molecules
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|a charge transport
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|a noncovalent conformational locks
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|a single-molecule junctions
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|a indacrinone
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|a B926Y9U4QN
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|a Indans
|2 NLM
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|a Xiong, Wan
|e verfasserin
|4 aut
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|a Wang, Jinying
|e verfasserin
|4 aut
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|a Hao, Jie
|e verfasserin
|4 aut
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|a Li, Mingpeng
|e verfasserin
|4 aut
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|a Wang, Boyu
|e verfasserin
|4 aut
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|a Chen, Yijian
|e verfasserin
|4 aut
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|a Si, Wei
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|4 aut
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|a Ren, Haiyang
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|4 aut
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|a Li, Guangwu
|e verfasserin
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|a Chen, Yongsheng
|e verfasserin
|4 aut
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|a Lü, Jingtao
|e verfasserin
|4 aut
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|a Zhang, Hongtao
|e verfasserin
|4 aut
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|a Jia, Chuancheng
|e verfasserin
|4 aut
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|a Guo, Xuefeng
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 28 vom: 05. Juli, Seite e2301876
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:35
|g year:2023
|g number:28
|g day:05
|g month:07
|g pages:e2301876
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|u http://dx.doi.org/10.1002/adma.202301876
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