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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202301468
|2 doi
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|a pubmed25n1183.xml
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|a DE-627
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|a eng
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| 100 |
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|a Zhu, Xiaoting
|e verfasserin
|4 aut
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|a High-Contrast Bidirectional Optoelectronic Synapses based on 2D Molecular Crystal Heterojunctions for Motion Detection
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 15.06.2023
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|a Date Revised 15.06.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Light-stimulated optoelectronic synaptic devices are fundamental compositions of the neuromorphic vision system. However, there are still huge challenges to achieving both bidirectional synaptic behaviors under light stimuli and high performance. Herein, a bilayer 2D molecular crystal (2DMC) p-n heterojunction is developed to achieve high-performance bidirectional synaptic behaviors. The 2DMC heterojunction-based field effect transistor (FET) devices exhibit typical ambipolar properties and remarkable responsivity (R) of 3.58×104 A W-1 under weak light as low as 0.008 mW cm-2 . Excitatory and inhibitory synaptic behaviors are successfully realized by the same light stimuli under different gate voltages. Moreover, a superior contrast ratio (CR) of 1.53×103 is demonstrated by the ultrathin and high-quality 2DMC heterojunction, which transcends previous optoelectronic synapses and enables application for the motion detection of the pendulum. Furthermore, a motion detection network based on the device is developed to detect and recognize classic motion vehicles in road traffic with an accuracy exceeding 90%. This work provides an effective strategy for developing high-contrast bidirectional optoelectronic synapses and shows great potential in the intelligent bionic device and future artificial vision
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|a Journal Article
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|a 2D molecular crystals
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|a bidirectional phototransistors
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|a p-n heterojunctions
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|a photoelectronic synapses
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| 700 |
1 |
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|a Gao, Changsong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ren, Yiwen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Xianghong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Enlong
|e verfasserin
|4 aut
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| 700 |
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|a Wang, Congyong
|e verfasserin
|4 aut
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| 700 |
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|a Yang, Fangxu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wu, Jishan
|e verfasserin
|4 aut
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| 700 |
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|a Hu, Wenping
|e verfasserin
|4 aut
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| 700 |
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|a Chen, Huipeng
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 24 vom: 02. Juni, Seite e2301468
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g volume:35
|g year:2023
|g number:24
|g day:02
|g month:06
|g pages:e2301468
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|u http://dx.doi.org/10.1002/adma.202301468
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