Outstanding Fill Factor in Inverted Organic Solar Cells with SnO2 by Atomic Layer Deposition

Outstanding Fill Factor in Inverted Organic Solar Cells with SnO2 by Atomic Layer Deposition

© 2023 The Authors. Advanced Materials published by Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 20 vom: 13. Mai, Seite e2301404
1. Verfasser: Di Mario, Lorenzo (VerfasserIn)
Weitere Verfasser: Garcia Romero, David, Wang, Han, Tekelenburg, Eelco K, Meems, Sander, Zaharia, Teodor, Portale, Giuseppe, Loi, Maria A
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article atomic layer deposition fill factor inverted structures nonfullerene organic solar cells tin oxide
Beschreibung
Zusammenfassung:© 2023 The Authors. Advanced Materials published by Wiley‐VCH GmbH.
Transport layers are of outmost importance for thin-film solar cells, determining not only their efficiency but also their stability. To bring one of these thin-film technologies toward mass production, many factors besides efficiency and stability become important, including the ease of deposition in a scalable manner and the cost of the different material's layers. Herein, highly efficient organic solar cells (OSCs), in the inverted structure (n-i-p), are demonstrated by using as electron transport layer (ETL) tin oxide (SnO2) deposited by atomic layer deposition (ALD). ALD is an industrial grade technique which can be applied at the wafer level and also in a roll-to-roll configuration. A champion power conversion efficiency (PCE) of 17.26% and a record fill factor (FF) of 79% are shown by PM6:L8-BO OSCs when using ALD-SnO2 as ETL. These devices outperform solar cells with SnO2 nanoparticles casted from solution (PCE 16.03%, FF 74%) and also those utilizing the more common sol-gel ZnO (PCE 16.84%, FF 77%). The outstanding results are attributed to a reduced charge carrier recombination at the interface between the ALD-SnO2 film and the active layer. Furthermore, a higher stability under illumination is demonstrated for the devices with ALD-SnO2 in comparison with those utilizing ZnO
Beschreibung:Date Revised 16.05.2024
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202301404