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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202300858
|2 doi
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|a pubmed25n1182.xml
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|a (DE-627)NLM354815202
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|a (NLM)36976522
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|a eng
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|a An, Taiyu
|e verfasserin
|4 aut
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|a Electrical Manipulation of Orbital Current Via Oxygen Migration in Ni81 Fe19 /CuOx /TaN Heterostructure
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 22.06.2023
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|a Date Revised 22.06.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a The orbital Hall effect and the interfacial Rashba effect provide new approaches to generate orbital current and spin-orbit torque (SOT) efficiently without the use of heavy metals. However, achieving efficient dynamic control of orbital current and SOT in light metal oxides has proven challenging. In this study, it is demonstrated that a sizable magnetoresistance effect related to orbital current and SOT can be observed in Ni81 Fe19 /CuOx /TaN heterostructures with various CuOx oxidization concentrations. The ionic liquid gating induces the migration of oxygen ions, which modulates the oxygen concentration at the Ni81 Fe19 /CuOx interface, leading to reversible manipulation of the magnetoresistance effect and SOT. The existence of a thick TaN capping layer allows for sophisticated internal oxygen ion reconstruction in the CuOx layer, rather than conventional external ion exchange. These results provide a method for the reversible and dynamic manipulation of the orbital current and SOT generation efficiency, thereby advancing the development of spin-orbitronic devices through ionic engineering
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|a Journal Article
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|a electric field control
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|a ion migration
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|a light metal oxides
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4 |
|a orbital current
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|a spin-orbit torque
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|a Cui, Bin
|e verfasserin
|4 aut
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1 |
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|a Zhang, Mingfang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Fufu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cheng, Shaobo
|e verfasserin
|4 aut
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1 |
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|a Zhang, Kuikui
|e verfasserin
|4 aut
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1 |
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|a Ren, Xue
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Liang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cheng, Bin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jiang, Changjun
|e verfasserin
|4 aut
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| 700 |
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|a Hu, Jifan
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 25 vom: 01. Juni, Seite e2300858
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g volume:35
|g year:2023
|g number:25
|g day:01
|g month:06
|g pages:e2300858
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|u http://dx.doi.org/10.1002/adma.202300858
|3 Volltext
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