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|a 10.1002/adma.202300084
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|a pubmed24n1181.xml
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|a (NLM)36929089
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|a DE-627
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|a eng
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|a Wei, Huan
|e verfasserin
|4 aut
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|a Novel Organic Superbase Dopants for Ultraefficient N-Doping of Organic Semiconductors
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|c 2023
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|a Text
|b txt
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 01.06.2023
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|a Date Revised 01.06.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Doping is a powerful technique for engineering the electrical properties of organic semiconductors (OSCs), yet efficient n-doping of OSCs remains a central challenge. Herein, the discovery of two organic superbase dopants, namely P2-t-Bu and P4-t-Bu as ultra-efficient n-dopants for OSCs is reported. Typical n-type semiconductors such as N2200 and PC61 BM are shown to experience a significant increase of conductivity upon doping by the two dopants. In particular, the optimized electrical conductivity of P2-t-Bu-doped PC61 BM reaches a record-high value of 2.64 S cm-1 . The polaron generation efficiency of P2-t-Bu-doped in PC61 BM is found to be over 35%, which is 2-3 times higher than that of benchmark n-dopant N-DMBI. In addition, a deprotonation-initiated, nucleophilic-attack-based n-doping mechanism is proposed for the organic superbases, which involves the deprotonation of OSC molecules, the nucleophilic attack of the resulting carbanions on the OSC's π-bonds, and the subsequent n-doping through single electron transfer process between the anionized and neutral OSCs. This work highlights organic superbases as promising n-dopants for OSCs and opens up opportunities to explore and develop highly efficient n-dopants
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|a Journal Article
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|a doping efficiency
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|a doping mechanism
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|a n-dopants
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|a organic semiconductors
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|a organic superbases
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|a Cheng, Zehong
|e verfasserin
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|a Wu, Tong
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|a Liu, Yu
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|a Guo, Jing
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|a Chen, Ping-An
|e verfasserin
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|a Xia, Jiangnan
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|4 aut
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|a Xie, Haihong
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|a Qiu, Xincan
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|4 aut
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|a Liu, Tingting
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|a Zhang, Bohan
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|a Hui, Jingshu
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|a Zeng, Zebing
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|a Bai, Yugang
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|a Hu, Yuanyuan
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 22 vom: 17. Juni, Seite e2300084
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:35
|g year:2023
|g number:22
|g day:17
|g month:06
|g pages:e2300084
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|u http://dx.doi.org/10.1002/adma.202300084
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