Room-Temperature Magnetism in 2D MnGa4 -H Induced by Hydrogen Insertion

Room-Temperature Magnetism in 2D MnGa4 -H Induced by Hydrogen Insertion

© 2023 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 20 vom: 01. Mai, Seite e2210828
1. Verfasser: Wei, Nan (VerfasserIn)
Weitere Verfasser: He, Liangcheng, Wu, Changwei, Lu, Dabiao, Li, Ruohan, Shi, Haiwen, Lan, Haihui, Wen, Yao, He, Jun, Long, Youwen, Wang, Xiao, Zeng, Mengqi, Fu, Lei
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2023
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D alloys MnGa4-H hydrogen insertion phase modulation room-temperature magnetism
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520 |a 2D room-temperature magnetic materials are of great importance in future spintronic devices while only very few are reported. Herein, a plasma-enhanced chemical vapor deposition approach is exploited to construct the 2D room-temperature magnetic MnGa4 -H single crystal with a thickness down to 2.2 nm. The employment of H2 plasma makes hydrogen atoms can be easily inserted into the MnGa4 lattice to modulate the atomic distance and charge state, thereby ferrimagnetism can be achieved without destroying the structural configuration. The as-obtained 2D MnGa4 -H crystal is high-quality, air-stable, and thermo-stable, demonstrating robust and stable room-temperature magnetism with a high Curie temperature above 620 K. This work enriches the 2D room-temperature magnetic family and opens up the possibility for the development of spintronic devices based on 2D magnetic alloys 
650 4 |a Journal Article 
650 4 |a 2D alloys 
650 4 |a MnGa4-H 
650 4 |a hydrogen insertion 
650 4 |a phase modulation 
650 4 |a room-temperature magnetism 
700 1 |a He, Liangcheng  |e verfasserin  |4 aut 
700 1 |a Wu, Changwei  |e verfasserin  |4 aut 
700 1 |a Lu, Dabiao  |e verfasserin  |4 aut 
700 1 |a Li, Ruohan  |e verfasserin  |4 aut 
700 1 |a Shi, Haiwen  |e verfasserin  |4 aut 
700 1 |a Lan, Haihui  |e verfasserin  |4 aut 
700 1 |a Wen, Yao  |e verfasserin  |4 aut 
700 1 |a He, Jun  |e verfasserin  |4 aut 
700 1 |a Long, Youwen  |e verfasserin  |4 aut 
700 1 |a Wang, Xiao  |e verfasserin  |4 aut 
700 1 |a Zeng, Mengqi  |e verfasserin  |4 aut 
700 1 |a Fu, Lei  |e verfasserin  |4 aut 
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773 1 8 |g volume:35  |g year:2023  |g number:20  |g day:01  |g month:05  |g pages:e2210828 
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