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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202208097
|2 doi
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|a pubmed24n1179.xml
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|a DE-627
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|a eng
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|a Zhao, Feng
|e verfasserin
|4 aut
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|a Maximum Emission Peak Over 1500 nm of Organic Assembly for Blood-Brain Barrier-Crossing NIR-IIb Phototheranostics of Orthotopic Glioblastoma
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 02.06.2023
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|a Date Revised 02.06.2023
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a The development of blood-brain barrier (BBB)-crossing phototheranostic agents in second near-infrared window (NIR-II), especially in the range of 1500-1700 nm (NIR-IIb), affords great opportunities for glioblastoma (GBM) management. Herein, an organic assembly (denoted as LET-12) with the maximum absorption peak at 1400 nm and emission peak at 1512 nm with trailing over 1700 nm through the self-assembly of organic small molecule IR-1064 is designed and subsequently decorated with choline and acetylcholine analogs. The LET-12 can effectively cross BBB through the brain's choline-like receptors-mediated transcytosis and accumulated in tumor tissues, thus achieving fluorescence/photoacoustic (FL/PA) duplex imaging of orthotopic GBM with ≈3.0 mm depth and a superior tumor-to-normal tissue signal ratio (20.93 ± 0.59 for FL imaging and 32.63 ± 1.16 for PA imaging, respectively). Owing to its good photothermal conversion ability, the LET-12 also can serve as a photothermal conversion agent, achieving obvious tumor repression of orthotopic murine GBM model after once treatment. The findings indicate that the LET-12 holds great potential for BBB-crossing NIR-IIb phototheranostics of orthotopic GBM. This self-assembly strategy of organic small molecules opens a new avenue for the construction of NIR-IIb phototheranostics
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|a Journal Article
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|a blood-brain barrier crossing
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|a near-infrared IIb window
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|a organic assembly
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|a orthotopic glioblastoma
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|a phototheranostics
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|a Zhang, Xinming
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Bai, Fang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lei, Shan
|e verfasserin
|4 aut
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| 700 |
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|a He, Gang
|e verfasserin
|4 aut
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|a Huang, Peng
|e verfasserin
|4 aut
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| 700 |
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|a Lin, Jing
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 22 vom: 01. Juni, Seite e2208097
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:35
|g year:2023
|g number:22
|g day:01
|g month:06
|g pages:e2208097
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|u http://dx.doi.org/10.1002/adma.202208097
|3 Volltext
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