Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications
Cryogenic operation of complementary metal oxide semiconductor (CMOS) silicon transistors is crucial for quantum information science, but it brings deviations from standard transistor operation. Here, we report on sharp current jumps and stable hysteretic loops in the drain current as a function of...
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Bibliographische Detailangaben
| Veröffentlicht in: | Applied physics letters. - 1998. - 119(2021), 4 vom: 14.
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| 1. Verfasser: |
Zaslavsky, A
(VerfasserIn) |
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| Weitere Verfasser: |
Richter, C A,
Shrestha, P R,
Hoskins, B D,
Le, S T,
Madhavan, A,
McClelland, J J |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2021
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| Zugriff auf das übergeordnete Werk: | Applied physics letters
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| Schlagworte: | Journal Article |
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