APA Zitierstil

Zha, J., Shi, S., Chaturvedi, A., Huang, H., Yang, P., Yao, Y., . . . Tan, C. (2023). Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band. Advanced materials (Deerfield Beach, Fla.), 35(20), . https://doi.org/10.1002/adma.202211598

Chicago Zitierstil

Zha, Jiajia, et al. "Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D Van Der Waals Heterostructure for In-Sensor Reservoir Computing at the Optical Communication Band." Advanced Materials (Deerfield Beach, Fla.) 35, no. 20 (2023). https://dx.doi.org/10.1002/adma.202211598.

MLA Zitierstil

Zha, Jiajia, et al. "Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D Van Der Waals Heterostructure for In-Sensor Reservoir Computing at the Optical Communication Band." Advanced Materials (Deerfield Beach, Fla.), vol. 35, no. 20, 2023.

Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.