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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202300195
|2 doi
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|a pubmed24n1177.xml
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|a DE-627
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|a eng
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|a Zhao, Siwei
|e verfasserin
|4 aut
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|a A Heteroanionic Zinc Ion Conductor for Dendrite-Free Zn Metal Anodes
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 07.05.2023
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|a Date Revised 07.05.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Although zinc-based batteries are promising candidates for eco-friendly and cost-effective energy storage devices, their performance is severely retarded by dendrite formation. As the simplest zinc compounds, zinc chalcogenides, and halides are individually applied as a Zn protection layer due to high zinc ion conductivity. However, the mixed-anion compounds are not studied, which constrains the Zn2+ diffusion in single-anion lattices to their own limits. A heteroanionic zinc ion conductor (Zny O1- x Fx ) coating layer is designed by in situ growth method with tunable F content and thickness. Strengthened by F aliovalent doping, the Zn2+ conductivity is enhanced within the wurtzite motif for rapid lattice Zn migration. Zny O1- x Fx also affords zincophilic sites for oriented superficial Zn plating to suppress dendrite growth. Therefore, Zny O1- x Fx -coated anode exhibits a low overpotential of 20.4 mV for 1000 h cycle life at a plating capacity of 1.0 mA h cm-2 during symmetrical cell test. The MnO2 //Zn full battery further proves high stability of 169.7 mA h g-1 for 1000 cycles. This work may enlighten the mixed-anion tuning for high-performance Zn-based energy storage devices
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|a Journal Article
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|a anodization
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|a mixed anion compounds
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|a zinc anode protection
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|a zinc ion conductors
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1 |
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|a Zhang, Yujing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Jidao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Qi, Limin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tang, Yuxin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhu, Jia
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhi, Jian
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Huang, Fuqiang
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 18 vom: 22. Mai, Seite e2300195
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:35
|g year:2023
|g number:18
|g day:22
|g month:05
|g pages:e2300195
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|u http://dx.doi.org/10.1002/adma.202300195
|3 Volltext
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