Full Control of Solid-State Electrolytes for Electrostatic Gating

© 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 18 vom: 02. Mai, Seite e2211993
1. Verfasser: Cao, Chuanwu (VerfasserIn)
Weitere Verfasser: Melegari, Margherita, Philippi, Marc, Domaretskiy, Daniil, Ubrig, Nicolas, Gutiérrez-Lezama, Ignacio, Morpurgo, Alberto F
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2023
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Li-ion conducting glass-ceramic gate-induced superconductivity ionic gating ionic-gate spectroscopy solid-state electrolytes
LEADER 01000naa a22002652 4500
001 NLM353189278
003 DE-627
005 20231226055433.0
007 cr uuu---uuuuu
008 231226s2023 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.202211993  |2 doi 
028 5 2 |a pubmed24n1177.xml 
035 |a (DE-627)NLM353189278 
035 |a (NLM)36812653 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Cao, Chuanwu  |e verfasserin  |4 aut 
245 1 0 |a Full Control of Solid-State Electrolytes for Electrostatic Gating 
264 1 |c 2023 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 07.05.2023 
500 |a Date Revised 07.05.2023 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH. 
520 |a Ionic gating is a powerful technique to realize field-effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top electrolyte gates, which pose experimental constraints and make device fabrication complex. Promising results obtained recently in FETs based on solid-state electrolytes remain plagued by spurious phenomena of unknown origin, preventing proper transistor operation, and causing limited control and reproducibility. Here, a class of solid-state electrolytes for gating (Lithium-ion conducting glass-ceramics, LICGCs) is explored, the processes responsible for the spurious phenomena and irreproducible behavior are identified, and properly functioning transistors exhibiting high density ambipolar operation with gate capacitance of ≈ 20   -   50   µ F c m - 2 \[20{\bm{ - }}50\;\mu F c{m^{{\bm{ - }}2}}\] (depending on the polarity of the accumulated charges) are demonstrated. Using 2D semiconducting transition-metal dichalcogenides, the ability to implement ionic-gate spectroscopy to determine the semiconducting bandgap, and to accumulate electron densities above 1014 cm-2 are demostrated, resulting in gate-induced superconductivity in MoS2 multilayers. As LICGCs are implemented in a back-gate configuration, they leave the surface of the material exposed, enabling the use of surface-sensitive techniques (such as scanning tunneling microscopy and photoemission spectroscopy) impossible so far in ionic-gated devices. They also allow double ionic gated devices providing independent control of charge density and electric field 
650 4 |a Journal Article 
650 4 |a Li-ion conducting glass-ceramic 
650 4 |a gate-induced superconductivity 
650 4 |a ionic gating 
650 4 |a ionic-gate spectroscopy 
650 4 |a solid-state electrolytes 
700 1 |a Melegari, Margherita  |e verfasserin  |4 aut 
700 1 |a Philippi, Marc  |e verfasserin  |4 aut 
700 1 |a Domaretskiy, Daniil  |e verfasserin  |4 aut 
700 1 |a Ubrig, Nicolas  |e verfasserin  |4 aut 
700 1 |a Gutiérrez-Lezama, Ignacio  |e verfasserin  |4 aut 
700 1 |a Morpurgo, Alberto F  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 35(2023), 18 vom: 02. Mai, Seite e2211993  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:35  |g year:2023  |g number:18  |g day:02  |g month:05  |g pages:e2211993 
856 4 0 |u http://dx.doi.org/10.1002/adma.202211993  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 35  |j 2023  |e 18  |b 02  |c 05  |h e2211993