A Wafer-Scale Nanoporous 2D Active Pixel Image Sensor Matrix with High Uniformity, High Sensitivity, and Rapid Switching

© 2023 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 14 vom: 18. Apr., Seite e2210715
1. Verfasser: Park, Heekyeong (VerfasserIn)
Weitere Verfasser: Sen, Anamika, Kaniselvan, Manasa, AlMutairi, AbdulAziz, Bala, Arindam, Lee, Luke P, Yoon, Youngki, Kim, Sunkook
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2023
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D nanomaterials image sensors nanoscale patterning wafer-scale synthesis
Beschreibung
Zusammenfassung:© 2023 Wiley-VCH GmbH.
2D transition-metal dichalcogenides (TMDs) have been successfully developed as novel ubiquitous optoelectronics owing to their excellent electrical and optical characteristics. However, active-matrix image sensors based on TMDs have limitations owing to the difficulty of fabricating large-area integrated circuitry and achieving high optical sensitivity. Herein, a large-area uniform, highly sensitive, and robust image sensor matrix with active pixels consisting of nanoporous molybdenum disulfide (MoS2 ) phototransistors and indium-gallium-zinc oxide (IGZO) switching transistors is reported. Large-area uniform 4-inch wafer-scale bilayer MoS2 films are synthesized by radio-frequency (RF) magnetron sputtering and sulfurization processes and patterned to be a nanoporous structure consisting of an array of periodic nanopores on the MoS2 surface via block copolymer lithography. Edge exposure on the nanoporous bilayer MoS2 induces the formation of subgap states, which promotes a photogating effect to obtain an exceptionally high photoresponsivity of 5.2 × 104 A W-1 . A 4-inch-wafer-scale image mapping is successively achieved using this active-matrix image sensor by controlling the device sensing and switching states. The high-performance active-matrix image sensor is state-of-the-art in 2D material-based integrated circuitry and pixel image sensor applications
Beschreibung:Date Completed 06.04.2023
Date Revised 06.04.2023
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202210715