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|a 10.1002/adma.202209931
|2 doi
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|a pubmed24n1176.xml
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|a (DE-627)NLM352974249
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|a (NLM)36790865
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Zhang, Wenhao
|e verfasserin
|4 aut
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|a Spin-Resolved Imaging of Antiferromagnetic Order in Fe4 Se5 Ultrathin Films on SrTiO3
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 11.05.2023
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|a Date Revised 11.05.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Unraveling the magnetic order in iron chalcogenides and pnictides at atomic scale is pivotal for understanding their unconventional superconducting pairing mechanism, but is experimentally challenging. Here, by utilizing spin-polarized scanning tunneling microscopy, real-space spin contrasts are successfully resolved to exhibit atomically unidirectional stripes in Fe4 Se5 ultrathin films, the plausible closely related compound of bulk FeSe with ordered Fe-vacancies, which are grown by molecular beam epitaxy. As is substantiated by the first-principles electronic structure calculations, the spin contrast originates from a pair-checkerboard antiferromagnetic ground state with in-plane magnetization, which is modulated by a spin-lattice coupling. These measurements further identify three types of nanoscale antiferromagnetic domains with distinguishable spin contrasts, which are subject to thermal fluctuations into short-ranged patches at elevated temperatures. This work provides promising opportunities in understanding the emergent magnetic order and the electronic phase diagram for FeSe-derived superconductors
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|a Journal Article
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|a Fe4Se5 films
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|a antiferromagnetic domains
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|a antiferromagnetic ground states
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|a magnetic stripes
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|a pair-checkerboard orders
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|a spin-polarized scanning tunneling microscopy
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|a Zhang, Zhi-Mo
|e verfasserin
|4 aut
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|a Nie, Jin-Hua
|e verfasserin
|4 aut
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|a Gong, Ben-Chao
|e verfasserin
|4 aut
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|a Cai, Min
|e verfasserin
|4 aut
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|a Liu, Kai
|e verfasserin
|4 aut
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|a Lu, Zhong-Yi
|e verfasserin
|4 aut
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|a Fu, Ying-Shuang
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 19 vom: 01. Mai, Seite e2209931
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:35
|g year:2023
|g number:19
|g day:01
|g month:05
|g pages:e2209931
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|u http://dx.doi.org/10.1002/adma.202209931
|3 Volltext
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