Size-Induced Ferroelectricity in Antiferroelectric Oxide Membranes

© 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 17 vom: 06. Apr., Seite e2210562
1. Verfasser: Xu, Ruijuan (VerfasserIn)
Weitere Verfasser: Crust, Kevin J, Harbola, Varun, Arras, Rémi, Patel, Kinnary Y, Prosandeev, Sergey, Cao, Hui, Shao, Yu-Tsun, Behera, Piush, Caretta, Lucas, Kim, Woo Jin, Khandelwal, Aarushi, Acharya, Megha, Wang, Melody M, Liu, Yin, Barnard, Edward S, Raja, Archana, Martin, Lane W, Gu, X Wendy, Zhou, Hua, Ramesh, Ramamoorthy, Muller, David A, Bellaiche, Laurent, Hwang, Harold Y
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2023
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article antiferroelectric materials membranes phase transition size effects sodium niobate
LEADER 01000naa a22002652 4500
001 NLM352491299
003 DE-627
005 20231226053839.0
007 cr uuu---uuuuu
008 231226s2023 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.202210562  |2 doi 
028 5 2 |a pubmed24n1174.xml 
035 |a (DE-627)NLM352491299 
035 |a (NLM)36739113 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Xu, Ruijuan  |e verfasserin  |4 aut 
245 1 0 |a Size-Induced Ferroelectricity in Antiferroelectric Oxide Membranes 
264 1 |c 2023 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 16.05.2023 
500 |a Date Revised 16.05.2023 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH. 
520 |a Despite extensive studies on size effects in ferroelectrics, how structures and properties evolve in antiferroelectrics with reduced dimensions still remains elusive. Given the enormous potential of utilizing antiferroelectrics for high-energy-density storage applications, understanding their size effects will provide key information for optimizing device performances at small scales. Here, the fundamental intrinsic size dependence of antiferroelectricity in lead-free NaNbO3 membranes is investigated. Via a wide range of experimental and theoretical approaches, an intriguing antiferroelectric-to-ferroelectric transition upon reducing membrane thickness is probed. This size effect leads to a ferroelectric single-phase below 40 nm, as well as a mixed-phase state with ferroelectric and antiferroelectric orders coexisting above this critical thickness. Furthermore, it is shown that the antiferroelectric and ferroelectric orders are electrically switchable. First-principle calculations further reveal that the observed transition is driven by the structural distortion arising from the membrane surface. This work provides direct experimental evidence for intrinsic size-driven scaling in antiferroelectrics and demonstrates enormous potential of utilizing size effects to drive emergent properties in environmentally benign lead-free oxides with the membrane platform 
650 4 |a Journal Article 
650 4 |a antiferroelectric materials 
650 4 |a membranes 
650 4 |a phase transition 
650 4 |a size effects 
650 4 |a sodium niobate 
700 1 |a Crust, Kevin J  |e verfasserin  |4 aut 
700 1 |a Harbola, Varun  |e verfasserin  |4 aut 
700 1 |a Arras, Rémi  |e verfasserin  |4 aut 
700 1 |a Patel, Kinnary Y  |e verfasserin  |4 aut 
700 1 |a Prosandeev, Sergey  |e verfasserin  |4 aut 
700 1 |a Cao, Hui  |e verfasserin  |4 aut 
700 1 |a Shao, Yu-Tsun  |e verfasserin  |4 aut 
700 1 |a Behera, Piush  |e verfasserin  |4 aut 
700 1 |a Caretta, Lucas  |e verfasserin  |4 aut 
700 1 |a Kim, Woo Jin  |e verfasserin  |4 aut 
700 1 |a Khandelwal, Aarushi  |e verfasserin  |4 aut 
700 1 |a Acharya, Megha  |e verfasserin  |4 aut 
700 1 |a Wang, Melody M  |e verfasserin  |4 aut 
700 1 |a Liu, Yin  |e verfasserin  |4 aut 
700 1 |a Barnard, Edward S  |e verfasserin  |4 aut 
700 1 |a Raja, Archana  |e verfasserin  |4 aut 
700 1 |a Martin, Lane W  |e verfasserin  |4 aut 
700 1 |a Gu, X Wendy  |e verfasserin  |4 aut 
700 1 |a Zhou, Hua  |e verfasserin  |4 aut 
700 1 |a Ramesh, Ramamoorthy  |e verfasserin  |4 aut 
700 1 |a Muller, David A  |e verfasserin  |4 aut 
700 1 |a Bellaiche, Laurent  |e verfasserin  |4 aut 
700 1 |a Hwang, Harold Y  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 35(2023), 17 vom: 06. Apr., Seite e2210562  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:35  |g year:2023  |g number:17  |g day:06  |g month:04  |g pages:e2210562 
856 4 0 |u http://dx.doi.org/10.1002/adma.202210562  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 35  |j 2023  |e 17  |b 06  |c 04  |h e2210562