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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202209951
|2 doi
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|a pubmed24n1174.xml
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|a DE-627
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|a eng
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|a Islam, Farhan
|e verfasserin
|4 aut
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|a Role of Magnetic Defects in Tuning Ground States of Magnetic Topological Insulators
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 25.05.2023
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|a Date Revised 25.05.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.
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|a Magnetic defects play an important, but poorly understood, role in magnetic topological insulators (TIs). For example, topological surface transport and bulk magnetic properties are controlled by magnetic defects in Bi2 Se3 -based dilute ferromagnetic (FM) TIs and MnBi2 Te4 (MBT)-based antiferromagnetic (AFM) TIs. Despite its nascent ferromagnetism, the inelastic neutron scattering data show that a fraction of the Mn defects in Sb2 Te3 form strong AFM dimer singlets within a quintuple block. The AFM superexchange coupling occurs via Mn-Te-Mn linear bonds and is identical to the AFM coupling between antisite defects and the FM Mn layer in MBT, establishing common interactions in the two materials classes. It is also found that the FM correlations in (Sb1-x Mnx )2 Te3 are likely driven by magnetic defects in adjacent quintuple blocks across the van der Waals gap. In addition to providing answers to long-standing questions about the evolution of FM order in dilute TI, these results also show that the evolution of global magnetic order from AFM to FM in Sb-substituted MBT is controlled by defect engineering of the intrablock and interblock coupling
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|a Journal Article
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|a ferromagnetic correlation
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|a localized dimer formation
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|a magnetic inelastic neutron scattering
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|a magnetic topological insulators
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|a Lee, Yongbin
|e verfasserin
|4 aut
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|a Pajerowski, Daniel M
|e verfasserin
|4 aut
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|a Oh, JinSu
|e verfasserin
|4 aut
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|a Tian, Wei
|e verfasserin
|4 aut
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|a Zhou, Lin
|e verfasserin
|4 aut
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|a Yan, Jiaqiang
|e verfasserin
|4 aut
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|a Ke, Liqin
|e verfasserin
|4 aut
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|a McQueeney, Robert J
|e verfasserin
|4 aut
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|a Vaknin, David
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 21 vom: 02. Mai, Seite e2209951
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:35
|g year:2023
|g number:21
|g day:02
|g month:05
|g pages:e2209951
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|u http://dx.doi.org/10.1002/adma.202209951
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