|
|
|
|
| LEADER |
01000naa a22002652 4500 |
| 001 |
NLM352335815 |
| 003 |
DE-627 |
| 005 |
20231226053502.0 |
| 007 |
cr uuu---uuuuu |
| 008 |
231226s2023 xx |||||o 00| ||eng c |
| 024 |
7 |
|
|a 10.1002/adma.202210612
|2 doi
|
| 028 |
5 |
2 |
|a pubmed24n1174.xml
|
| 035 |
|
|
|a (DE-627)NLM352335815
|
| 035 |
|
|
|a (NLM)36723241
|
| 040 |
|
|
|a DE-627
|b ger
|c DE-627
|e rakwb
|
| 041 |
|
|
|a eng
|
| 100 |
1 |
|
|a Li, Zhigang
|e verfasserin
|4 aut
|
| 245 |
1 |
0 |
|a Near Zero-Threshold Voltage P-N Junction Diodes Based on Super-Semiconducting Nanostructured Ag/Al Arrays
|
| 264 |
|
1 |
|c 2023
|
| 336 |
|
|
|a Text
|b txt
|2 rdacontent
|
| 337 |
|
|
|a ƒaComputermedien
|b c
|2 rdamedia
|
| 338 |
|
|
|a ƒa Online-Ressource
|b cr
|2 rdacarrier
|
| 500 |
|
|
|a Date Completed 29.03.2023
|
| 500 |
|
|
|a Date Revised 29.03.2023
|
| 500 |
|
|
|a published: Print-Electronic
|
| 500 |
|
|
|a Citation Status PubMed-not-MEDLINE
|
| 520 |
|
|
|a © 2023 Wiley-VCH GmbH.
|
| 520 |
|
|
|a Semiconductor devices are currently one of the most common energy consumption devices. Significantly reducing the energy consumption of semiconductor devices with advanced energy-efficient technologies is highly desirable. The discovery of super-semiconductors (SSCs) based on metallic bi-layer shell arrays provides an opportunity to realize ultra-low-power consumption semiconductor devices. As an example, the achievement of near zero-threshold voltage in p-n junction diodes based on super-semiconducting nanostructured Ag/Al arrays is reported, realizing ultra-low-power p-n junction diodes: ≈3 W per trillion diodes with a working voltage of 1 V or 30 mW per trillion diodes with an operating voltage of 0.1 V. In addition, the p-n junction diodes exhibit a high breakdown field of ≈1.1 × 106 V cm-1 , similar to that of SiC and GaN, due to a robust built-in field driven by infrared light photons. The SSC p-n diodes with near zero-threshold voltage and high breakdown field allow access to ultra-low-power semiconducting transistors, integrated circuits, chips, etc
|
| 650 |
|
4 |
|a Journal Article
|
| 650 |
|
4 |
|a breakdown field
|
| 650 |
|
4 |
|a p-n junction diodes
|
| 650 |
|
4 |
|a plasmon resonances
|
| 650 |
|
4 |
|a super-semiconductors
|
| 650 |
|
4 |
|a threshold voltages
|
| 700 |
1 |
|
|a Li, Jiteng
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Wang, Weike
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Yan, Qijie
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Zhou, Yongrui
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Zhu, Luping
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Cao, Bingqiang
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Wei, Bingqing
|e verfasserin
|4 aut
|
| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 13 vom: 27. März, Seite e2210612
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
|
| 773 |
1 |
8 |
|g volume:35
|g year:2023
|g number:13
|g day:27
|g month:03
|g pages:e2210612
|
| 856 |
4 |
0 |
|u http://dx.doi.org/10.1002/adma.202210612
|3 Volltext
|
| 912 |
|
|
|a GBV_USEFLAG_A
|
| 912 |
|
|
|a SYSFLAG_A
|
| 912 |
|
|
|a GBV_NLM
|
| 912 |
|
|
|a GBV_ILN_350
|
| 951 |
|
|
|a AR
|
| 952 |
|
|
|d 35
|j 2023
|e 13
|b 27
|c 03
|h e2210612
|