|
|
|
|
| LEADER |
01000naa a22002652 4500 |
| 001 |
NLM351911790 |
| 003 |
DE-627 |
| 005 |
20231226052525.0 |
| 007 |
cr uuu---uuuuu |
| 008 |
231226s2023 xx |||||o 00| ||eng c |
| 024 |
7 |
|
|a 10.1002/adma.202206945
|2 doi
|
| 028 |
5 |
2 |
|a pubmed24n1172.xml
|
| 035 |
|
|
|a (DE-627)NLM351911790
|
| 035 |
|
|
|a (NLM)36680462
|
| 040 |
|
|
|a DE-627
|b ger
|c DE-627
|e rakwb
|
| 041 |
|
|
|a eng
|
| 100 |
1 |
|
|a Moon, Ji-Hwan
|e verfasserin
|4 aut
|
| 245 |
1 |
0 |
|a Electrically Driven Sub-Micrometer Light-Emitting Diode Arrays Using Maskless and Etching-Free Pixelation
|
| 264 |
|
1 |
|c 2023
|
| 336 |
|
|
|a Text
|b txt
|2 rdacontent
|
| 337 |
|
|
|a ƒaComputermedien
|b c
|2 rdamedia
|
| 338 |
|
|
|a ƒa Online-Ressource
|b cr
|2 rdacarrier
|
| 500 |
|
|
|a Date Completed 29.03.2023
|
| 500 |
|
|
|a Date Revised 29.03.2023
|
| 500 |
|
|
|a published: Print-Electronic
|
| 500 |
|
|
|a Citation Status PubMed-not-MEDLINE
|
| 520 |
|
|
|a © 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.
|
| 520 |
|
|
|a For decades, group-III-nitride-based light-emitting diodes (LEDs) have been regarded as a light emitting source for future displays by virtue of their novel properties such as high efficiency, brightness, and stability. Nevertheless, realization of high pixel density displays is still challenging due to limitations of pixelation methods. Here, a maskless and etching-free micro-LED (µLED) pixelation method is developed via tailored He focused ion beam (FIB) irradiation technique, and electrically driven sub-micrometer-scale µLED pixel arrays are demonstrated. It is confirmed that optical quenching and electrical isolation effects are simultaneously induced at a certain ion dose (≈1014 ions cm-2 ) without surface damage. Furthermore, highly efficient µLED pixel arrays at sub-micrometer scale (square pixel, 0.5 µm side length) are fabricated. Their pixelation and brightness are verified by various optical measurements such as cathodo-, photo-, and electroluminescence. It is expected that the FIB-induced optical quenching and electrical isolation method can pioneer a new defect engineering technology not only for µLED fabrication, but also for sub-micrometer-scale optoelectronic devices
|
| 650 |
|
4 |
|a Journal Article
|
| 650 |
|
4 |
|a electrically driven devices
|
| 650 |
|
4 |
|a focused ion beams
|
| 650 |
|
4 |
|a luminescence quenching and electrical isolation
|
| 650 |
|
4 |
|a maskless and etching-free pixelation
|
| 650 |
|
4 |
|a sub-micrometer light-emitting diodes
|
| 700 |
1 |
|
|a Kim, Baul
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Choi, Minho
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Woo, Kie Young
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Kim, Byung Su
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Ahn, Seonghun
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Jun, Seongmoon
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Song, Yong-Ho
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Cho, Yong-Hoon
|e verfasserin
|4 aut
|
| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 13 vom: 02. März, Seite e2206945
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
|
| 773 |
1 |
8 |
|g volume:35
|g year:2023
|g number:13
|g day:02
|g month:03
|g pages:e2206945
|
| 856 |
4 |
0 |
|u http://dx.doi.org/10.1002/adma.202206945
|3 Volltext
|
| 912 |
|
|
|a GBV_USEFLAG_A
|
| 912 |
|
|
|a SYSFLAG_A
|
| 912 |
|
|
|a GBV_NLM
|
| 912 |
|
|
|a GBV_ILN_350
|
| 951 |
|
|
|a AR
|
| 952 |
|
|
|d 35
|j 2023
|e 13
|b 02
|c 03
|h e2206945
|