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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202209995
|2 doi
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|a pubmed25n1171.xml
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|a (DE-627)NLM351513523
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|a (NLM)36640444
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a He, Wei
|e verfasserin
|4 aut
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|a Record-High Work-Function p-Type CuBiP2 Se6 Atomic Layers for High-Photoresponse van der Waals Vertical Heterostructure Phototransistor
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 06.04.2023
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|a Date Revised 06.04.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a The notable lack of intrinsic p-type 2D layered semiconductors has hindered the engineering of 2D devices for complementary metal oxide semiconductors (CMOSs). Herein, a novel quaternary intrinsic p-type 2D semiconductor, CuBiP2 Se6 atomic layers, is introduced into the 2D family. The semiconductor displays a high work function of 5.26 eV, a moderate hole mobility of 1.72 cm2 V-1 s-1 , and an ultrahigh on/off current exceeding 106 at room temperature. To date, 5.26 eV is the highest work-function recorded in p-type 2D materials, indicating the ultrastable p-type behavior of CuBiP2 Se6 . Additionally, a multilayer graphene/CuBiP2 Se6 /multilayer graphene (MLG/CBPS/MLG)-based fully vertical van der Waals heterostructure phototransistor is designed and fabricated. This device exhibits outstanding optoelectronic performance with a responsivity (R) of 4.9 × 104 A W-1 , an external quantum efficiency (EQE) of 1.5 × 107 %, a detectivity (D) of 1.14 × 1013 Jones, and a broad working wavelength (400-1100 nm), respectively. This is comparable to state-of-the-art 2D devices. Such excellent performance is attributed to the ultrashort transmit length and nondestructive/defect-free contacts. This leads to faster response speed and eliminates Fermi-level pinning effects. Moreover, ultrahigh responsivity and detectivity endow the device with applaudable imaging sensing capability. These results make CuBiP2 Se6 an ideal p-type candidate material for next-generation CMOSs logic devices
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|a Journal Article
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|a p-type 2D semiconductors
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|a photodetectors
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|a vertical heterostructure
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|a work function
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|a Kong, Lingling
|e verfasserin
|4 aut
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1 |
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|a Yu, Peng
|e verfasserin
|4 aut
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| 700 |
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|a Yang, Guowei
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 14 vom: 25. Apr., Seite e2209995
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g volume:35
|g year:2023
|g number:14
|g day:25
|g month:04
|g pages:e2209995
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|u http://dx.doi.org/10.1002/adma.202209995
|3 Volltext
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