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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202210915
|2 doi
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|a pubmed24n1171.xml
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|a (DE-627)NLM351482903
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|a (NLM)36637346
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Sun, Qizeng
|e verfasserin
|4 aut
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|a Density-of-States Matching-Induced Ultrahigh Current Density and High-Humidity Resistance in a Simply Structured Triboelectric Nanogenerator
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 06.04.2023
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|a Date Revised 06.04.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Triboelectric nanogenerators (TENGs) can covert mechanical energy into electricity in a clean and sustainable manner. However, traditional TENGs are mainly limited by the low output current, and thus their practical applications are still limited. Herein, a new type of TENG is developed by using conductive materials as the triboelectric layers and electrodes simultaneously. Because of the matched density of states between the two triboelectric layers, this simply structured device reaches an open-circuit voltage of 1400 V and an ultrahigh current density of 1333 mA m-2 when poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film and copper (Cu) or aluminum (Al) foil are used as the triboelectric pair. The current density increases by nearly three orders of magnitude compared with traditional TENGs. More importantly, this device can work stably in high-humidity environments, which is always a big challenge for traditional TENGs. Surprisingly, this TENG can even perform well in the presence of water droplets. This work provides a new and effective strategy for constructing high-performance TENGs, which can be used in many practical applications in the near future
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|a Journal Article
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|a density of states matching
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|a flexible electronics
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|a humidity-resistive materials
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|a triboelectric nanogenerators
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|a ultrahigh output current
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|a Liang, Fei
|e verfasserin
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|a Ren, Guozhang
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|a Zhang, Linrong
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|a He, Shunhao
|e verfasserin
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|a Gao, Kun
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|4 aut
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|a Gong, Zhongyan
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|4 aut
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|a Zhang, Yulong
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|4 aut
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|a Kang, Xing
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|a Zhu, Chengcheng
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|a Song, Yaxin
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|a Sheng, Huixiang
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|a Lu, Gang
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|a Yu, Hai-Dong
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|a Huang, Wei
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 14 vom: 01. Apr., Seite e2210915
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:35
|g year:2023
|g number:14
|g day:01
|g month:04
|g pages:e2210915
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|u http://dx.doi.org/10.1002/adma.202210915
|3 Volltext
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