Light-Induced Mott-Insulator-to-Metal Phase Transition in Ultrathin Intermediate-Spin Ferromagnetic Perovskite Ruthenates

Light-Induced Mott-Insulator-to-Metal Phase Transition in Ultrathin Intermediate-Spin Ferromagnetic Perovskite Ruthenates

© 2023 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 12 vom: 28. März, Seite e2211612
1. Verfasser: Liu, Ruxin (VerfasserIn)
Weitere Verfasser: Si, Liang, Niu, Wei, Zhang, Xu, Chen, Zhongqiang, Zhu, Changzheng, Zhuang, Wenzhuo, Chen, Yongda, Zhou, Liqi, Zhang, Chunchen, Wang, Peng, Song, Fengqi, Tang, Lin, Xu, Yongbing, Zhong, Zhicheng, Zhang, Rong, Wang, Xuefeng
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2023
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Mott insulators charge transfer ferromagnetism insulator-to-metal transition light illumination ultrathin SrRuO3
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245 1 0 |a Light-Induced Mott-Insulator-to-Metal Phase Transition in Ultrathin Intermediate-Spin Ferromagnetic Perovskite Ruthenates 
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520 |a Light control of emergent quantum phenomena is a widely used external stimulus for quantum materials. Generally, perovskite strontium ruthenate SrRuO3 has an itinerant ferromagnetism with a low-spin state. However, the phase of intermediate-spin (IS) ferromagnetic metallic state has never been seen. Here, by means of UV-light irradiation, a photocarrier-doping-induced Mott-insulator-to-metal phase transition is shown in a few atomic layers of perovskite IS ferromagnetic SrRuO3- δ . This new metastable IS metallic phase can be reversibly regulated due to the convenient photocharge transfer from SrTiO3 substrates to SrRuO3- δ ultrathin films. These dynamical mean-field theory calculations further verify such photoinduced electronic phase transformation, owing to oxygen vacancies and orbital reconstruction. The optical manipulation of charge-transfer finesse is an alternative pathway toward discovering novel metastable phases in strongly correlated systems and facilitates potential light-controlled device applications in optoelectronics and spintronics 
650 4 |a Journal Article 
650 4 |a Mott insulators 
650 4 |a charge transfer 
650 4 |a ferromagnetism 
650 4 |a insulator-to-metal transition 
650 4 |a light illumination 
650 4 |a ultrathin SrRuO3 
700 1 |a Si, Liang  |e verfasserin  |4 aut 
700 1 |a Niu, Wei  |e verfasserin  |4 aut 
700 1 |a Zhang, Xu  |e verfasserin  |4 aut 
700 1 |a Chen, Zhongqiang  |e verfasserin  |4 aut 
700 1 |a Zhu, Changzheng  |e verfasserin  |4 aut 
700 1 |a Zhuang, Wenzhuo  |e verfasserin  |4 aut 
700 1 |a Chen, Yongda  |e verfasserin  |4 aut 
700 1 |a Zhou, Liqi  |e verfasserin  |4 aut 
700 1 |a Zhang, Chunchen  |e verfasserin  |4 aut 
700 1 |a Wang, Peng  |e verfasserin  |4 aut 
700 1 |a Song, Fengqi  |e verfasserin  |4 aut 
700 1 |a Tang, Lin  |e verfasserin  |4 aut 
700 1 |a Xu, Yongbing  |e verfasserin  |4 aut 
700 1 |a Zhong, Zhicheng  |e verfasserin  |4 aut 
700 1 |a Zhang, Rong  |e verfasserin  |4 aut 
700 1 |a Wang, Xuefeng  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 35(2023), 12 vom: 28. März, Seite e2211612  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:35  |g year:2023  |g number:12  |g day:28  |g month:03  |g pages:e2211612 
856 4 0 |u http://dx.doi.org/10.1002/adma.202211612  |3 Volltext 
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