Efficient Perovskite/Silicon Tandem Solar Cells on Industrially Compatible Textured Silicon

© 2023 Wiley-VCH GmbH.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 9 vom: 18. März, Seite e2207883
Auteur principal: Luo, Xin (Auteur)
Autres auteurs: Luo, Haowen, Li, Hongjiang, Xia, Rui, Zheng, Xuntian, Huang, Zilong, Liu, Zhou, Gao, Han, Zhang, Xueling, Li, Songlin, Feng, Zhiqiang, Chen, Yifeng, Tan, Hairen
Format: Article en ligne
Langue:English
Publié: 2023
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article anion-engineered additive strategy hybrid two-step perovskite deposition industrially feasible textured silicon perovskite/silicon tandem solar cells
LEADER 01000caa a22002652c 4500
001 NLM351102485
003 DE-627
005 20250304065929.0
007 cr uuu---uuuuu
008 231226s2023 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.202207883  |2 doi 
028 5 2 |a pubmed25n1170.xml 
035 |a (DE-627)NLM351102485 
035 |a (NLM)36599055 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Luo, Xin  |e verfasserin  |4 aut 
245 1 0 |a Efficient Perovskite/Silicon Tandem Solar Cells on Industrially Compatible Textured Silicon 
264 1 |c 2023 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 02.03.2023 
500 |a Date Revised 02.03.2023 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2023 Wiley-VCH GmbH. 
520 |a Monolithic perovskite/silicon tandem solar cells promise power-conversion efficiencies (PCEs) exceeding the Shockley-Queisser limit of single-junction solar cells. The conformal deposition of perovskites on industrially feasible textured silicon solar cells allows for both lowered manufacturing costs and a higher matched photocurrent density, compared to state-of-the-art tandems using front-side flat or mildly textured silicon. However, the inferior crystal quality of perovskite films grown on fully-textured silicon compromises the photovoltaic performance. Here, an anion-engineered additive strategy is developed to control the crystallization process of wide-bandgap perovskite films, which enables improved film crystallinity, reduced trap density, and conformal deposition on industrially textured silicon. This strategy allows the fabrication of 28.6%-efficient perovskite/silicon heterojunction tandem solar cells (certified 27.9%, 1 cm2 ). This approach is compatible with the scalable fabrication of tandems on industrially textured silicon, demonstrating an efficiency of 25.1% for an aperture area of 16 cm2 . The anion-engineered additive significantly improves the operating stability of wide-bandgap perovskite solar cells, and the encapsulated tandem solar cells retain over 80% of their initial performance following 2000 h of operation under full 1-sun illumination in ambient conditions 
650 4 |a Journal Article 
650 4 |a anion-engineered additive strategy 
650 4 |a hybrid two-step perovskite deposition 
650 4 |a industrially feasible textured silicon 
650 4 |a perovskite/silicon tandem solar cells 
700 1 |a Luo, Haowen  |e verfasserin  |4 aut 
700 1 |a Li, Hongjiang  |e verfasserin  |4 aut 
700 1 |a Xia, Rui  |e verfasserin  |4 aut 
700 1 |a Zheng, Xuntian  |e verfasserin  |4 aut 
700 1 |a Huang, Zilong  |e verfasserin  |4 aut 
700 1 |a Liu, Zhou  |e verfasserin  |4 aut 
700 1 |a Gao, Han  |e verfasserin  |4 aut 
700 1 |a Zhang, Xueling  |e verfasserin  |4 aut 
700 1 |a Li, Songlin  |e verfasserin  |4 aut 
700 1 |a Feng, Zhiqiang  |e verfasserin  |4 aut 
700 1 |a Chen, Yifeng  |e verfasserin  |4 aut 
700 1 |a Tan, Hairen  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 35(2023), 9 vom: 18. März, Seite e2207883  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnas 
773 1 8 |g volume:35  |g year:2023  |g number:9  |g day:18  |g month:03  |g pages:e2207883 
856 4 0 |u http://dx.doi.org/10.1002/adma.202207883  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 35  |j 2023  |e 9  |b 18  |c 03  |h e2207883