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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202208362
|2 doi
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|a pubmed24n1169.xml
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|a (DE-627)NLM350895058
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|a (NLM)36578126
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Huang, Yixuan
|e verfasserin
|4 aut
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|a Laser-Induced Hole Coherence and Spatial Self-Phase Modulation in the Anisotropic 3D Weyl Semimetal TaAs
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 20.03.2023
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|a Date Revised 20.03.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Laser-induced electron coherence is a fascinating topic in manipulating quantum materials. Recently, it has been shown that laser-induced electron coherence in 2D materials can produce a third-order nonlinear optical response spatial self-phase modulation (SSPM), which has been used to develop a novel all-optical switching scheme. However, such investigations have mainly focused on electron coherence, whereas laser-induced hole coherence is rarely explored. Here, the observation of the optical Kerr effect in 3D Weyl semimetal TaAs flakes is reported. The nonlinear susceptibility (χ(3) ) is obtained, which exhibits a surprisingly high value (with χ o n e - l a y e r ( 3 ) \[{\bm{\chi }}_{{\bf one}{\bm{ - }}{\bf layer}}^{{\bf (3)}}\] = 9.9 × 10-9 e.s.u. or 1.4 × 10-16 m2 V-2 at 532 nm). This cannot be explained by the conventional electron mobility, but can be well understood by the unique high anisotropic hole mobility of TaAs. The wind-chime model and χ(3) carrier mobility correlation adequately explain the results, suggesting the crucial role of laser-induced nonlocal ac hole coherence. These observations extend the understanding of SSPM from 2D to 3D quantum materials with anisotropic carrier mobility and from electron coherence to hole coherence
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|a Journal Article
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|a Weyl semimetals
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4 |
|a anisotropry
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4 |
|a hole coherence
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|a laser-induced phenomena
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4 |
|a nonlinear optical response
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| 650 |
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4 |
|a spatial self-phase modulation
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| 700 |
1 |
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|a Zhao, Hui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Zhilin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hu, Lili
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wu, Yanling
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Sun, Fei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Meng, Sheng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhao, Jimin
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 11 vom: 11. März, Seite e2208362
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:35
|g year:2023
|g number:11
|g day:11
|g month:03
|g pages:e2208362
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|u http://dx.doi.org/10.1002/adma.202208362
|3 Volltext
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|d 35
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