Ultra-Narrowband Near-Infrared Responsive J-Aggregates of Fused Quinoidal Tetracyanoindacenodithiophene

Ultra-Narrowband Near-Infrared Responsive J-Aggregates of Fused Quinoidal Tetracyanoindacenodithiophene

© 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 11 vom: 22. März, Seite e2209800
1. Verfasser: He, Qiao (VerfasserIn)
Weitere Verfasser: Basu, Aniruddha, Cha, Hyojung, Daboczi, Matyas, Panidi, Julianna, Tan, Luxi, Hu, Xiantao, Huang, Chi Cheng, Ding, Bowen, White, Andrew J P, Kim, Ji-Seon, Durrant, James R, Anthopoulos, Thomas D, Heeney, Martin
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2023
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article J-aggregates indacenodithiophenes narrow absorption organic semiconductors quinoidal materials
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520 |a Narrowband photoresponsive molecules are highly coveted in high-resolution imaging, sensing, and monochromatic photodetection, especially those extending into the near-infrared (NIR) spectral range. Here, a new class of J-aggregating materials based on quinoidal indacenodithiophenes (IDTs) that exhibit an ultra-narrowband (full width half maxima of 22 nm) NIR absorption peak centered at 770 nm is reported. The spectral width is readily tuned by the length of the solubilizing alkyl group, with longer chains resulting in significant spectral narrowing. The J-aggregate behavior is confirmed by a combination of excited state lifetime measurements and single-crystal X-ray diffraction measurements. Their utility as electron-transporting materials is demonstrated in both transistor and phototransistor devices, with the latter demonstrating good response at NIR wavelengths (780 nm) over a range of intensities 
650 4 |a Journal Article 
650 4 |a J-aggregates 
650 4 |a indacenodithiophenes 
650 4 |a narrow absorption 
650 4 |a organic semiconductors 
650 4 |a quinoidal materials 
700 1 |a Basu, Aniruddha  |e verfasserin  |4 aut 
700 1 |a Cha, Hyojung  |e verfasserin  |4 aut 
700 1 |a Daboczi, Matyas  |e verfasserin  |4 aut 
700 1 |a Panidi, Julianna  |e verfasserin  |4 aut 
700 1 |a Tan, Luxi  |e verfasserin  |4 aut 
700 1 |a Hu, Xiantao  |e verfasserin  |4 aut 
700 1 |a Huang, Chi Cheng  |e verfasserin  |4 aut 
700 1 |a Ding, Bowen  |e verfasserin  |4 aut 
700 1 |a White, Andrew J P  |e verfasserin  |4 aut 
700 1 |a Kim, Ji-Seon  |e verfasserin  |4 aut 
700 1 |a Durrant, James R  |e verfasserin  |4 aut 
700 1 |a Anthopoulos, Thomas D  |e verfasserin  |4 aut 
700 1 |a Heeney, Martin  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 35(2023), 11 vom: 22. März, Seite e2209800  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:35  |g year:2023  |g number:11  |g day:22  |g month:03  |g pages:e2209800 
856 4 0 |u http://dx.doi.org/10.1002/adma.202209800  |3 Volltext 
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