Fullerene-Liquid-Crystal-Induced Micrometer-Scale Charge-Carrier Diffusion in Organic Bulk Heterojunction

© 2022 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 9 vom: 01. März, Seite e2210463
1. Verfasser: Zhao, Fuwen (VerfasserIn)
Weitere Verfasser: He, Dan, Zou, Can, Li, Yawen, Wang, Ke, Zhang, Jianqi, Yang, Shuang, Tu, Yingfeng, Wang, Chunru, Lin, Yuze
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2023
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article charge-carrier diffusion length fullerene liquid crystals high-efficiency thick-film devices organic solar cells
Beschreibung
Zusammenfassung:© 2022 Wiley-VCH GmbH.
The short charge-carrier diffusion length (LD ) (100-300 nm) in organic bulk heterojunction (BHJ) impedes the further improvement in power conversion efficiency (PCE) of organic solar cells (OSCs), especially for thick-film (>400 nm) devices matching with industrial solution processing. Here a facile method is developed to efficiently increase LD and then improve PCEs of OSCs via introducing a fullerene liquid crystal, F1, into the active layer. F1 combines the inherent high electron mobility of fullerene and strong self-assembly capacity of liquid crystal, providing a fast channel for charge-carrier transport and reducing energetic disorder and trap density in BHJ film via enhancing crystallization. Typically, in PM6:Y6:F1 BHJ, the enhanced charge-carrier mobility (>10-2 cm-2 V-1 s-1 ) and prolonged charge-carrier lifetime (55.3 µs) are acquired to realize the record LD of 1.6 or 2.4 µm for electron or hole, respectively, which are much higher than those of the PM6:Y6 binary sample and comparable to or even better than those values reported for some inorganic/hybrid materials, such as CuInx Ga(1- x ) Se2 (CIGS) and perovskite thin films. Benefitting from the micrometer-scale LD , the PM6:Y6:F1 ternary OSCs sustain a remarkable PCE of 15.23% with the active layer thickness approaching 500 nm
Beschreibung:Date Completed 02.03.2023
Date Revised 02.03.2023
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202210463