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|a 10.1002/adma.202209097
|2 doi
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|a pubmed24n1166.xml
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|a (DE-627)NLM349925453
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|a (NLM)36480195
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Pan, Zhichao
|e verfasserin
|4 aut
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|a Van der Waals Multilayer Heterojunction for Low-Voltage Organic RGB Area-Emitting Transistor Array
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 24.02.2023
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|a Date Revised 24.02.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Organic light-emitting transistors (OLETs) have garnered considerable attention from academy and industry due to their potential applications in next-generation display technologies, multifunctional devices, and organic electrically pumped lasers. However, overcoming the trade-offs among power consumption, external quantum efficiency (EQE), and uniform area emission remains a long-standing issue for OLETs. Herein, a van der Waals multilayer heterojunction methodology is proposed to enhance the layer-to-layer interfacial interaction and contact, resulting in better dipole shielding, carrier transport, exciton recombination, and current density distribution. The prepared multilayer heterojunction OLET (MLH-OLET) array shows uniform and bright RGB area emission and low operating voltage (<30 V among the lowest applied voltage of reported lateral LETs). Additionally, a high brightness under area emission of 1060 cd m-2 , a high EQE value of 0.85%, and a high loop stability (over 380 cycles, outperforming state-of-the-art OLETs) indicate that the proposed multilayer heterojunction is obviously superior to the reported lateral device configuration. The van der Waals multilayer heterojunction developed for the preparation of OLET arrays sufficiently meets the low-voltage, high-performance, and low-cost requirements of future display technologies
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|a Journal Article
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|a RGB area emission
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|a low voltage
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|a multilayer heterojunctions
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|a organic light-emitting transistor arrays
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|a van der Waals interaction
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|a Liu, Kai
|e verfasserin
|4 aut
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|a Miao, Zhagen
|e verfasserin
|4 aut
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|a Guo, Ankang
|e verfasserin
|4 aut
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|a Wen, Wei
|e verfasserin
|4 aut
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|a Liu, Guocai
|e verfasserin
|4 aut
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|a Liu, Yanwei
|e verfasserin
|4 aut
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|a Shi, Wenkang
|e verfasserin
|4 aut
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|a Kuang, Junhua
|e verfasserin
|4 aut
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|a Bian, Yangshuang
|e verfasserin
|4 aut
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|a Qin, Mingcong
|e verfasserin
|4 aut
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|a Zhu, Mingliang
|e verfasserin
|4 aut
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|a Zhao, Zhiyuan
|e verfasserin
|4 aut
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|a Guo, Yunlong
|e verfasserin
|4 aut
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|a Dong, Huanli
|e verfasserin
|4 aut
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|a Liu, Yunqi
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 8 vom: 03. Feb., Seite e2209097
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:35
|g year:2023
|g number:8
|g day:03
|g month:02
|g pages:e2209097
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|u http://dx.doi.org/10.1002/adma.202209097
|3 Volltext
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|d 35
|j 2023
|e 8
|b 03
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