Physical Origin of Negative Differential Resistance in V3 O5 and Its Application as a Solid-State Oscillator

© 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 8 vom: 01. Feb., Seite e2208477
Auteur principal: Das, Sujan Kumar (Auteur)
Autres auteurs: Nandi, Sanjoy Kumar, Marquez, Camilo Verbel, Rúa, Armando, Uenuma, Mutsunori, Puyoo, Etienne, Nath, Shimul Kanti, Albertini, David, Baboux, Nicolas, Lu, Teng, Liu, Yun, Haeger, Tobias, Heiderhoff, Ralf, Riedl, Thomas, Ratcliff, Thomas, Elliman, Robert Glen
Format: Article en ligne
Langue:English
Publié: 2023
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article V3O5 metal-insulator transition negative differential resistance neuromorphic computing threshold switching