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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202209465
|2 doi
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|a pubmed25n1165.xml
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|a (DE-627)NLM349725810
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|a (NLM)36460029
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Wang, Yuzhu
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Room-Temperature Magnetoelectric Coupling in Atomically Thin ε-Fe2 O3
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|c 2023
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| 336 |
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 23.02.2023
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|a Date Revised 23.02.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a 2D multiferroics with magnetoelectric coupling combine the magnetic order and electric polarization in a single phase, providing a cornerstone for constructing high-density information storages and low-energy-consumption spintronic devices. The strong interactions between various order parameters are crucial for realizing such multifunctional applications, nevertheless, this criterion is rarely met in classical 2D materials at room-temperature. Here an ingenious space-confined chemical vapor deposition strategy is designed to synthesize atomically thin non-layered ε-Fe2 O3 single crystals and disclose the room-temperature long-range ferrimagnetic order. Interestingly, the strong ferroelectricity and its switching behavior are unambiguously discovered in atomically thin ε-Fe2 O3 , accompanied with an anomalous thickness-dependent coercive voltage. More significantly, the robust room-temperature magnetoelectric coupling is uncovered by controlling the magnetism with electric field and verifies the multiferroic feature of atomically thin ε-Fe2 O3 . This work not only represents a substantial leap in terms of the controllable synthesis of 2D multiferroics with robust magnetoelectric coupling, but also provides a crucial step toward the practical applications in low-energy-consumption electric-writing/magnetic-reading devices
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|a Journal Article
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|a atomically thin ε-Fe2O3 single crystals
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4 |
|a multiferroics
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4 |
|a room-temperature ferrimagnetism
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4 |
|a room-temperature ferroelectricity
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| 650 |
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4 |
|a room-temperature magnetoelectric coupling
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| 700 |
1 |
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|a Wang, Peng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Hao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xu, Bingqian
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Hui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cheng, Mo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Feng, Wang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Du, Ruofan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Song, Luying
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wen, Xia
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Xiaohui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yang, Junbo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cai, Yao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a He, Jun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Zhenxing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shi, Jianping
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 7 vom: 15. Feb., Seite e2209465
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
8 |
|g volume:35
|g year:2023
|g number:7
|g day:15
|g month:02
|g pages:e2209465
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202209465
|3 Volltext
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|a GBV_ILN_350
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|a AR
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|d 35
|j 2023
|e 7
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|c 02
|h e2209465
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