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231226s2022 xx |||||o 00| ||eng c |
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|a 10.1021/acs.chemmater.2c02800
|2 doi
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|a pubmed24n1165.xml
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|a (DE-627)NLM349522200
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|a (NLM)36439318
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|a DE-627
|b ger
|c DE-627
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|a eng
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1 |
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|a Ubbink, Reinout F
|e verfasserin
|4 aut
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| 245 |
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|a A Water-Free In Situ HF Treatment for Ultrabright InP Quantum Dots
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 29.11.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 The Authors. Published by American Chemical Society.
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|a Indium phosphide quantum dots are the main alternative for toxic and restricted Cd-based quantum dots for lighting and display applications, but in the absence of protecting ZnSe and/or ZnS shells, InP quantum dots suffer from low photoluminescence quantum yields. Traditionally, HF treatments have been used to improve the quantum yield of InP to ∼50%, but these treatments are dangerous and not well understood. Here, we develop a postsynthetic treatment that forms HF in situ from benzoyl fluoride, which can be used to strongly increase the quantum yield of InP core-only quantum dots. This treatment is water-free and can be performed safely. Simultaneous addition of the z-type ligand ZnCl2 increases the photoluminescence quantum yield up to 85%. Structural analysis via XPS as well as solid state and solution NMR measurements shows that the in situ generated HF leads to a surface passivation by indium fluoride z-type ligands and removes polyphosphates, but not PO3 and PO4 species from the InP surface. With DFT calculations it is shown that InP QDs can be trap-free even when PO3 and PO4 species are present on the surface. These results show that both polyphosphate removal and z-type passivation are necessary to obtain high quantum yields in InP core-only quantum dots. They further show that core-only InP QDs can achieve photoluminescence quantum yields rivalling those of InP/ZnSe/ZnS core/shell/shell QDs and the best core-only II-VI QDs
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|a Journal Article
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1 |
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|a Almeida, Guilherme
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Iziyi, Hodayfa
|e verfasserin
|4 aut
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| 700 |
1 |
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|a du Fossé, Indy
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Verkleij, Ruud
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ganapathy, Swapna
|e verfasserin
|4 aut
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| 700 |
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|a van Eck, Ernst R H
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Houtepen, Arjan J
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Chemistry of materials : a publication of the American Chemical Society
|d 1998
|g 34(2022), 22 vom: 22. Nov., Seite 10093-10103
|w (DE-627)NLM098194763
|x 0897-4756
|7 nnns
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| 773 |
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|g volume:34
|g year:2022
|g number:22
|g day:22
|g month:11
|g pages:10093-10103
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|u http://dx.doi.org/10.1021/acs.chemmater.2c02800
|3 Volltext
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|a AR
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|d 34
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|e 22
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|h 10093-10103
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