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231226s2022 xx |||||o 00| ||eng c |
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|a 10.1021/acs.chemmater.2c01102
|2 doi
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|a eng
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|a Barr, Maïssa K S
|e verfasserin
|4 aut
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| 245 |
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|a Solution Atomic Layer Deposition of Smooth, Continuous, Crystalline Metal-Organic Framework Thin Films
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|c 2022
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|a Text
|b txt
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Revised 29.11.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 The Authors. Published by American Chemical Society.
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|a For the first time, a procedure has been established for the growth of surface-anchored metal-organic framework (SURMOF) copper(II) benzene-1,4-dicarboxylate (Cu-BDC) thin films of thickness control with single molecule accuracy. For this, we exploit the novel method solution atomic layer deposition (sALD). The sALD growth rate has been determined at 4.5 Å per cycle. The compact and dense SURMOF films grown at room temperature by sALD possess a vastly superior film thickness uniformity than those deposited by conventional solution-based techniques, such as dipping and spraying while featuring clear crystallinity from 100 nm thickness. The highly controlled layer-by-layer growth mechanism of sALD proves crucial to prevent unwanted side reactions such as Ostwald ripening or detrimental island growth, ensuring continuous Cu-BDC film coverage. This successful demonstration of sALD-grown compact continuous Cu-BDC SURMOF films is a paradigm change and provides a key advancement enabling a multitude of applications that require continuous and ultrathin coatings while maintaining tight film thickness specifications, which were previously unattainable with conventional solution-based growth methods
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|a Journal Article
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|a Nadiri, Soheila
|e verfasserin
|4 aut
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|a Chen, Dong-Hui
|e verfasserin
|4 aut
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| 700 |
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|a Weidler, Peter G
|e verfasserin
|4 aut
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|a Bochmann, Sebastian
|e verfasserin
|4 aut
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|a Baumgart, Helmut
|e verfasserin
|4 aut
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|a Bachmann, Julien
|e verfasserin
|4 aut
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| 700 |
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|a Redel, Engelbert
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Chemistry of materials : a publication of the American Chemical Society
|d 1998
|g 34(2022), 22 vom: 22. Nov., Seite 9836-9843
|w (DE-627)NLM098194763
|x 0897-4756
|7 nnns
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| 773 |
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|g volume:34
|g year:2022
|g number:22
|g day:22
|g month:11
|g pages:9836-9843
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|u http://dx.doi.org/10.1021/acs.chemmater.2c01102
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