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|a 10.1002/adma.202207763
|2 doi
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|a pubmed24n1162.xml
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|a (DE-627)NLM348870507
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|a (NLM)36373546
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Song, Jiajun
|e verfasserin
|4 aut
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|a Perovskite Solar Cell-Gated Organic Electrochemical Transistors for Flexible Photodetectors with Ultrahigh Sensitivity and Fast Response
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 10.02.2023
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|a Date Revised 10.02.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Photodetectors (PDs) are the building block of various imaging and sensing applications. However, commercially available PDs based on crystalline inorganic semiconductors cannot meet the requirements of emerging wearable/implantable applications due to their rigidity and fragility, which creates the need for flexible devices. Here, a high-performance flexible PD is presented by gating an organic electrochemical transistor (OECT) with a perovskite solar cell. Due to the ultrahigh transconductance of the OECT, the device demonstrates a high gain of ≈106 , a fast response time of 67 µs and an ultrahigh detectivity of 6.7 × 1017 Jones to light signals under a low working voltage (≤0.6 V). Thanks to the ultrahigh sensitivity and fast response, the device can track photoplethysmogram signals and peripheral oxygen saturation under ambient light and even provide contactless remote sensing, offering a low-power and convenient way for continuous vital signs monitoring. This work offers a novel strategy for realizing high-performance flexible PDs that are promising for low-power, user-friendly and wearable optoelectronics
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|a Journal Article
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|a contactless sensing
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|a flexible photodetectors
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|a organic electrochemical transistors
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|a perovskite solar cells
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|a wearable electronics
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|a Tang, Guanqi
|e verfasserin
|4 aut
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|a Cao, Jiupeng
|e verfasserin
|4 aut
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|a Liu, Hong
|e verfasserin
|4 aut
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1 |
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|a Zhao, Zeyu
|e verfasserin
|4 aut
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|a Griggs, Sophie
|e verfasserin
|4 aut
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|a Yang, Anneng
|e verfasserin
|4 aut
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|a Wang, Naixiang
|e verfasserin
|4 aut
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|a Cheng, Haiyang
|e verfasserin
|4 aut
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|a Liu, Chun-Ki
|e verfasserin
|4 aut
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|a McCulloch, Iain
|e verfasserin
|4 aut
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|a Yan, Feng
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 6 vom: 20. Feb., Seite e2207763
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:35
|g year:2023
|g number:6
|g day:20
|g month:02
|g pages:e2207763
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|u http://dx.doi.org/10.1002/adma.202207763
|3 Volltext
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