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20250304014006.0 |
007 |
cr uuu---uuuuu |
008 |
231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202207374
|2 doi
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|a pubmed25n1161.xml
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|a (DE-627)NLM34843586X
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035 |
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|a (NLM)36329667
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Naclerio, Andrew E
|e verfasserin
|4 aut
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|a A Review of Scalable Hexagonal Boron Nitride (h-BN) Synthesis for Present and Future Applications
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 10.02.2023
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|a Date Revised 10.02.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Hexagonal boron nitride (h-BN) is a layered inorganic synthetic crystal exhibiting high temperature stability and high thermal conductivity. As a ceramic material it has been widely used for thermal management, heat shielding, lubrication, and as a filler material for structural composites. Recent scientific advances in isolating atomically thin monolayers from layered van der Waals crystals to study their unique properties has propelled research interest in mono/few layered h-BN as a wide bandgap insulating support for nanoscale electronics, tunnel barriers, communications, neutron detectors, optics, sensing, novel separations, quantum emission from defects, among others. Realizing these futuristic applications hinges on scalable cost-effective high-quality h-BN synthesis. Here, the authors review scalable approaches of high-quality mono/multilayer h-BN synthesis, discuss the challenges and opportunities for each method, and contextualize their relevance to emerging applications. Maintaining a stoichiometric balance B:N = 1 as the atoms incorporate into the growing layered crystal and maintaining stacking order between layers during multi-layer synthesis emerge as some of the main challenges for h-BN synthesis and the development of processes to address these aspects can inform and guide the synthesis of other layered materials with more than one constituent element. Finally, the authors contextualize h-BN synthesis efforts along with quality requirements for emerging applications via a technological roadmap
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|a Journal Article
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|a Review
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|a 2D materials
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|a catalytic growth
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|a chemical vapor deposition
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|a crystal growth
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|a hexagonal boron nitride (h-BN)
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|a quantum materials
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|a Kidambi, Piran R
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 6 vom: 30. Feb., Seite e2207374
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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1 |
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|g volume:35
|g year:2023
|g number:6
|g day:30
|g month:02
|g pages:e2207374
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|u http://dx.doi.org/10.1002/adma.202207374
|3 Volltext
|
912 |
|
|
|a GBV_USEFLAG_A
|
912 |
|
|
|a SYSFLAG_A
|
912 |
|
|
|a GBV_NLM
|
912 |
|
|
|a GBV_ILN_350
|
951 |
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|a AR
|
952 |
|
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|d 35
|j 2023
|e 6
|b 30
|c 02
|h e2207374
|