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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202207317
|2 doi
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|a pubmed24n1160.xml
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|a (DE-627)NLM348223250
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|a (NLM)36308036
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|a DE-627
|b ger
|c DE-627
|e rakwb
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| 041 |
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|a eng
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| 100 |
1 |
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|a Klein, Maciej
|e verfasserin
|4 aut
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| 245 |
1 |
0 |
|a Polarization-Tunable Perovskite Light-Emitting Metatransistor
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1 |
|c 2023
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| 336 |
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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| 500 |
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|a Date Completed 05.01.2023
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|a Date Revised 11.01.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Emerging immersive visual communication technologies require light sources with complex functionality for dynamic control of polarization, directivity, wavefront, spectrum, and intensity of light. Currently, this is mostly achieved by free space bulk optic elements, limiting the adoption of these technologies. Flat optics based on artificially structured metasurfaces that operate at the sub-wavelength scale are a viable solution, however, their integration into electrically driven devices remains challenging. Here, a radically new approach to monolithic integration of a dielectric metasurface into a perovskite light-emitting transistor is demonstrated. It is shown that nanogratings directly structured on top of the transistor channel yield an 8-fold increase of electroluminescence intensity and dynamic tunability of polarization. This new light-emitting metatransistor device concept opens unlimited opportunities for light management strategies based on metasurface design and integration
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4 |
|a Journal Article
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4 |
|a dielectric metasurfaces
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| 650 |
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4 |
|a halide perovskites
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| 650 |
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4 |
|a metatransistors
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| 650 |
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4 |
|a perovskite light-emitting transistors
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| 700 |
1 |
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|a Wang, Yutao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tian, Jingyi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ha, Son Tung
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Paniagua-Domínguez, Ramón
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kuznetsov, Arseniy I
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Adamo, Giorgio
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Soci, Cesare
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 1 vom: 29. Jan., Seite e2207317
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
8 |
|g volume:35
|g year:2023
|g number:1
|g day:29
|g month:01
|g pages:e2207317
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| 856 |
4 |
0 |
|u http://dx.doi.org/10.1002/adma.202207317
|3 Volltext
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|a GBV_USEFLAG_A
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|a SYSFLAG_A
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| 912 |
|
|
|a GBV_NLM
|
| 912 |
|
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|a GBV_ILN_350
|
| 951 |
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|a AR
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| 952 |
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|d 35
|j 2023
|e 1
|b 29
|c 01
|h e2207317
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