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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202203411
|2 doi
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|a pubmed24n1160.xml
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|a (DE-627)NLM348150849
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|a (NLM)36300686
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Liu, Caixing
|e verfasserin
|4 aut
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|a Emergent, Non-Aging, Extendable, and Rechargeable Exchange Bias in 2D Fe3 GeTe2 Homostructures Induced by Moderate Pressuring
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 05.01.2023
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|a Date Revised 11.01.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a As a crucial concept in magnetism and spintronics, exchange bias (ExB) measures the asymmetry in the hysteresis loop of a pinned ferromagnet (FM)/antiferromagnet (AFM) interface. Previous studies are mainly focused on FM/AFM heterostructures composed of conventional bulk materials, whose complex interfaces prohibit precise control and full understanding of the phenomenon. Here, the enabling power of 2D magnets is exploited to demonstrate the emergence, non-aging, extendability, and rechargeability of ExB in van der Waals Fe3 GeTe2 homostructures, upon moderate pressuring. The emergence of the ExB is attributed to a local stress-induced FM-to-AFM transition, as validated using first-principles calculations, and confirmed in magneto-optical Kerr effect and second harmonic generation measurements. It is also observed that, negligible ExB aging before the training effect suddenly takes place through avalanching, pronounced delay of the avalanche via timed pressure repetition (extendability), ExB recovery in the post-training sample upon refreshed pressuring (rechargeability), and demonstrate its versatile tunability. These striking findings offer unprecedented insights into the underlying principles of ExB and its training, with immense technological applications in sight
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|a Journal Article
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|a 2D magnets
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|a Fe3GeTe2
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|a exchange bias
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|a training effect
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|a van der Waals homostructures
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|a Zhang, Huisheng
|e verfasserin
|4 aut
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|a Zhang, Shunhong
|e verfasserin
|4 aut
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|a Hou, De
|e verfasserin
|4 aut
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|a Liu, Yonglai
|e verfasserin
|4 aut
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|a Wu, Hanqing
|e verfasserin
|4 aut
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|a Jiang, Zhongzhu
|e verfasserin
|4 aut
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| 700 |
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|a Wang, HuaiXiang
|e verfasserin
|4 aut
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| 700 |
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|a Ma, Zongwei
|e verfasserin
|4 aut
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| 700 |
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|a Luo, Xuan
|e verfasserin
|4 aut
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| 700 |
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|a Li, Xiaoyin
|e verfasserin
|4 aut
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|a Sun, Yuping
|e verfasserin
|4 aut
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|a Xu, Xiaohong
|e verfasserin
|4 aut
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|a Zhang, Zhenyu
|e verfasserin
|4 aut
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|a Sheng, Zhigao
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 1 vom: 15. Jan., Seite e2203411
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:35
|g year:2023
|g number:1
|g day:15
|g month:01
|g pages:e2203411
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|u http://dx.doi.org/10.1002/adma.202203411
|3 Volltext
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