A Hemispherical Image Sensor Array Fabricated with Organic Photomemory Transistors

A Hemispherical Image Sensor Array Fabricated with Organic Photomemory Transistors

© 2022 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 1 vom: 30. Jan., Seite e2203541
1. Verfasser: Kim, Yeongin (VerfasserIn)
Weitere Verfasser: Zhu, Chenxin, Lee, Wen-Ya, Smith, Anna, Ma, Haowen, Li, Xiang, Son, Donghee, Matsuhisa, Naoji, Kim, Jaemin, Bae, Won-Gyu, Cho, Sung Ho, Kim, Myung-Gil, Kurosawa, Tadanori, Katsumata, Toru, To, John W F, Oh, Jin Young, Paik, Seonghyun, Kim, Soo Jin, Jin, Lihua, Yan, Feng, Tok, Jeffrey B-H, Bao, Zhenan
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2023
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article hemispherical image sensors image sensor arrays organic thin films photomemory transistors
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520 |a Hemispherical image sensors simplify lens designs, reduce optical aberrations, and improve image resolution for compact wide-field-of-view cameras. To achieve hemispherical image sensors, organic materials are promising candidates due to the following advantages: tunability of optoelectronic/spectral response and low-temperature low-cost processes. Here, a photolithographic process is developed to prepare a hemispherical image sensor array using organic thin film photomemory transistors with a density of 308 pixels per square centimeter. This design includes only one photomemory transistor as a single active pixel, in contrast to the conventional pixel architecture, consisting of select/readout/reset transistors and a photodiode. The organic photomemory transistor, comprising light-sensitive organic semiconductor and charge-trapping dielectric, is able to achieve a linear photoresponse (light intensity range, from 1 to 50 W m-2 ), along with a responsivity as high as 1.6 A W-1 (wavelength = 465 nm) for a dark current of 0.24 A m-2 (drain voltage = -1.5 V). These observed values represent the best responsivity for similar dark currents among all the reported hemispherical image sensor arrays to date. A transfer method was further developed that does not damage organic materials for hemispherical organic photomemory transistor arrays. These developed techniques are scalable and are amenable for other high-resolution 3D organic semiconductor devices 
650 4 |a Journal Article 
650 4 |a hemispherical image sensors 
650 4 |a image sensor arrays 
650 4 |a organic thin films 
650 4 |a photomemory transistors 
700 1 |a Zhu, Chenxin  |e verfasserin  |4 aut 
700 1 |a Lee, Wen-Ya  |e verfasserin  |4 aut 
700 1 |a Smith, Anna  |e verfasserin  |4 aut 
700 1 |a Ma, Haowen  |e verfasserin  |4 aut 
700 1 |a Li, Xiang  |e verfasserin  |4 aut 
700 1 |a Son, Donghee  |e verfasserin  |4 aut 
700 1 |a Matsuhisa, Naoji  |e verfasserin  |4 aut 
700 1 |a Kim, Jaemin  |e verfasserin  |4 aut 
700 1 |a Bae, Won-Gyu  |e verfasserin  |4 aut 
700 1 |a Cho, Sung Ho  |e verfasserin  |4 aut 
700 1 |a Kim, Myung-Gil  |e verfasserin  |4 aut 
700 1 |a Kurosawa, Tadanori  |e verfasserin  |4 aut 
700 1 |a Katsumata, Toru  |e verfasserin  |4 aut 
700 1 |a To, John W F  |e verfasserin  |4 aut 
700 1 |a Oh, Jin Young  |e verfasserin  |4 aut 
700 1 |a Paik, Seonghyun  |e verfasserin  |4 aut 
700 1 |a Kim, Soo Jin  |e verfasserin  |4 aut 
700 1 |a Jin, Lihua  |e verfasserin  |4 aut 
700 1 |a Yan, Feng  |e verfasserin  |4 aut 
700 1 |a Tok, Jeffrey B-H  |e verfasserin  |4 aut 
700 1 |a Bao, Zhenan  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 35(2023), 1 vom: 30. Jan., Seite e2203541  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:35  |g year:2023  |g number:1  |g day:30  |g month:01  |g pages:e2203541 
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