A Hemispherical Image Sensor Array Fabricated with Organic Photomemory Transistors

Détails bibliographiques
Publié dans:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 1 vom: 30. Jan., Seite e2203541
Auteur principal:	Kim, Yeongin (Auteur)
Autres auteurs:	Zhu, Chenxin, Lee, Wen-Ya, Smith, Anna, Ma, Haowen, Li, Xiang, Son, Donghee, Matsuhisa, Naoji, Kim, Jaemin, Bae, Won-Gyu, Cho, Sung Ho, Kim, Myung-Gil, Kurosawa, Tadanori, Katsumata, Toru, To, John W F, Oh, Jin Young, Paik, Seonghyun, Kim, Soo Jin, Jin, Lihua, Yan, Feng, Tok, Jeffrey B-H, Bao, Zhenan
Format:	Article en ligne
Langue:	English
Publié:	2023
Accès à la collection:	Advanced materials (Deerfield Beach, Fla.)
Sujets:	Journal Article hemispherical image sensors image sensor arrays organic thin films photomemory transistors

Description
Résumé:	© 2022 Wiley-VCH GmbH. Hemispherical image sensors simplify lens designs, reduce optical aberrations, and improve image resolution for compact wide-field-of-view cameras. To achieve hemispherical image sensors, organic materials are promising candidates due to the following advantages: tunability of optoelectronic/spectral response and low-temperature low-cost processes. Here, a photolithographic process is developed to prepare a hemispherical image sensor array using organic thin film photomemory transistors with a density of 308 pixels per square centimeter. This design includes only one photomemory transistor as a single active pixel, in contrast to the conventional pixel architecture, consisting of select/readout/reset transistors and a photodiode. The organic photomemory transistor, comprising light-sensitive organic semiconductor and charge-trapping dielectric, is able to achieve a linear photoresponse (light intensity range, from 1 to 50 W m-2 ), along with a responsivity as high as 1.6 A W-1 (wavelength = 465 nm) for a dark current of 0.24 A m-2 (drain voltage = -1.5 V). These observed values represent the best responsivity for similar dark currents among all the reported hemispherical image sensor arrays to date. A transfer method was further developed that does not damage organic materials for hemispherical organic photomemory transistor arrays. These developed techniques are scalable and are amenable for other high-resolution 3D organic semiconductor devices
Description:	Date Completed 05.01.2023 Date Revised 11.01.2023 published: Print-Electronic Citation Status PubMed-not-MEDLINE
ISSN:	1521-4095
DOI:	10.1002/adma.202203541