AFM Study of Roughness Development during ToF-SIMS Depth Profiling of Multilayers with a Cs+ Ion Beam in a H2 Atmosphere

The influence of H2 flooding on the development of surface roughness during time-of-flight secondary ion mass spectrometry (ToF-SIMS) depth profiling was studied to evaluate the different aspects of a H2 atmosphere in comparison to an ultrahigh vacuum (UHV) environment. Multilayer samples, consistin...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 38(2022), 42 vom: 25. Okt., Seite 12871-12880
1. Verfasser: Ekar, Jernej (VerfasserIn)
Weitere Verfasser: Kovač, Janez
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2022
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article
LEADER 01000naa a22002652 4500
001 NLM347547273
003 DE-627
005 20231226034101.0
007 cr uuu---uuuuu
008 231226s2022 xx |||||o 00| ||eng c
024 7 |a 10.1021/acs.langmuir.2c01837  |2 doi 
028 5 2 |a pubmed24n1158.xml 
035 |a (DE-627)NLM347547273 
035 |a (NLM)36239688 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Ekar, Jernej  |e verfasserin  |4 aut 
245 1 0 |a AFM Study of Roughness Development during ToF-SIMS Depth Profiling of Multilayers with a Cs+ Ion Beam in a H2 Atmosphere 
264 1 |c 2022 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Revised 29.10.2022 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a The influence of H2 flooding on the development of surface roughness during time-of-flight secondary ion mass spectrometry (ToF-SIMS) depth profiling was studied to evaluate the different aspects of a H2 atmosphere in comparison to an ultrahigh vacuum (UHV) environment. Multilayer samples, consisting of different combinations of metal, metal oxide, and alloy layers of different elements, were bombarded with 1 and 2 keV Cs+ ion beams in UHV and a H2 atmosphere of 7 × 10-7 mbar. The surface roughness Sa was measured with atomic force microscopy (AFM) on the initial surface and in the craters formed while sputtering, either in the middle of the layers or at the interfaces. We found that the roughness after Cs+ sputtering depends on the chemical composition/structure of the individual layers, and it increases with the sputtering depth. However, the increase in the roughness was, in specific cases, approximately a few tens of percent lower when sputtering in the H2 atmosphere compared to the UHV. In the other cases, the average surface roughness was generally still lower when H2 flooding was applied, but the differences were statistically insignificant. Additionally, we observed that for the initially rough surfaces with an Sa of about 5 nm, sputtering with the 1 keV Cs+ beam might have a smoothing effect, thereby reducing the initial roughness. Our observations also indicate that Cs+ sputtering with ion energies of 1 and 2 keV has a similar effect on roughness development, except for the cases with initially very smooth samples. The results show the beneficial effect of H2 flooding on surface roughness development during the ToF-SIMS depth profiling in addition to a reduction of the matrix effect and an improved identification of thin layers 
650 4 |a Journal Article 
700 1 |a Kovač, Janez  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Langmuir : the ACS journal of surfaces and colloids  |d 1992  |g 38(2022), 42 vom: 25. Okt., Seite 12871-12880  |w (DE-627)NLM098181009  |x 1520-5827  |7 nnns 
773 1 8 |g volume:38  |g year:2022  |g number:42  |g day:25  |g month:10  |g pages:12871-12880 
856 4 0 |u http://dx.doi.org/10.1021/acs.langmuir.2c01837  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_22 
912 |a GBV_ILN_350 
912 |a GBV_ILN_721 
951 |a AR 
952 |d 38  |j 2022  |e 42  |b 25  |c 10  |h 12871-12880