An Effective Sneak-Path Solution Based on a Transient-Relaxation Device
© 2022 Wiley-VCH GmbH.
| Publié dans: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 1 vom: 26. Jan., Seite e2207133 |
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| Auteur principal: | |
| Autres auteurs: | , , , |
| Format: | Article en ligne |
| Langue: | English |
| Publié: |
2023
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| Accès à la collection: | Advanced materials (Deerfield Beach, Fla.) |
| Sujets: | Journal Article memory memristor neuromorphic computing protein nanowires sneak path |
| Résumé: | © 2022 Wiley-VCH GmbH. An efficient strategy for addressing individual devices is required to unveil the full potential of memristors for high-density memory and computing applications. Existing strategies using two-terminal selectors that are preferable for compact integration have trade-offs in reduced generality or functional window. A strategy that applies to broad memristors and maintains their full-range functional window is proposed. This strategy uses a type of unipolar switch featuring a transient relaxation or retention as the selector. The unidirectional current flow in the switch suppresses the sneak-path current, whereas the transient-relaxation window is exploited for bidirectional programming. A unipolar volatile memristor with ultralow switching voltage (e.g., <100 mV), constructed from a protein nanowire dielectric harvested from Geobacter sulfurreducens, is specifically employed as the example switch to highlight the advantages and scalability in the strategy for array integration |
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| Description: | Date Completed 05.01.2023 Date Revised 11.01.2023 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.202207133 |