In Situ Observation of Fracture along Twin Boundaries in Boron Carbide

In Situ Observation of Fracture along Twin Boundaries in Boron Carbide

© 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 50 vom: 12. Dez., Seite e2204375
1. Verfasser: Li, Penghui (VerfasserIn)
Weitere Verfasser: Bu, Yeqiang, Wang, Linyan, Wang, Chong, Huang, Junquan, Tong, Ke, Chen, Yujun, He, Julong, Zhao, Zhisheng, Xu, Bo, Liu, Zhongyuan, Gao, Guoying, Nie, Anmin, Wang, Hongtao, Tian, Yongjun
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2023
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article atomic scale boron carbide fracture in situ transmission electron microscopy twin boundaries
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520 |a The observation of fracture behaviors in perfect and twinned B4 C crystals via in situ transmission electron microscopy (TEM) mechanical testing is reported. The crystal structure of the synthesized B4 C, composed of B11 C icosahedra connected by boron-deficient C-▫-C chains in a chemical formula of B11 C3 , is determined by state-of-the-art aberration-corrected scanning TEM. The in situ TEM observations reveal that cracking is preferentially initiated at the twin boundaries (TBs) in B4 C under both indentation and tension loading. The cracks then propagate along the TBs, thus resulting in the fracture of B4 C. These results are consistent with the theoretical calculations that show that TBs have a softening effect on B4 C with amorphous bands preferentially nucleated at the TBs. These findings elucidate the atomic arrangement and the role of planar defects in the failure of B4 C. Furthermore, they can guide the design of advanced superhard materials via planar defect control 
650 4 |a Journal Article 
650 4 |a atomic scale 
650 4 |a boron carbide 
650 4 |a fracture 
650 4 |a in situ transmission electron microscopy 
650 4 |a twin boundaries 
700 1 |a Bu, Yeqiang  |e verfasserin  |4 aut 
700 1 |a Wang, Linyan  |e verfasserin  |4 aut 
700 1 |a Wang, Chong  |e verfasserin  |4 aut 
700 1 |a Huang, Junquan  |e verfasserin  |4 aut 
700 1 |a Tong, Ke  |e verfasserin  |4 aut 
700 1 |a Chen, Yujun  |e verfasserin  |4 aut 
700 1 |a He, Julong  |e verfasserin  |4 aut 
700 1 |a Zhao, Zhisheng  |e verfasserin  |4 aut 
700 1 |a Xu, Bo  |e verfasserin  |4 aut 
700 1 |a Liu, Zhongyuan  |e verfasserin  |4 aut 
700 1 |a Gao, Guoying  |e verfasserin  |4 aut 
700 1 |a Nie, Anmin  |e verfasserin  |4 aut 
700 1 |a Wang, Hongtao  |e verfasserin  |4 aut 
700 1 |a Tian, Yongjun  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 35(2023), 50 vom: 12. Dez., Seite e2204375  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:35  |g year:2023  |g number:50  |g day:12  |g month:12  |g pages:e2204375 
856 4 0 |u http://dx.doi.org/10.1002/adma.202204375  |3 Volltext 
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