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231226s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202207445
|2 doi
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|a pubmed24n1153.xml
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|a (NLM)36094887
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|a eng
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|a Gao, Yanbo
|e verfasserin
|4 aut
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|a High-Performance Perovskite Light-Emitting Diodes Enabled by Passivating Defect and Constructing Dual Energy-Transfer Pathway through Functional Perovskite Nanocrystals
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 26.10.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Quasi-2D perovskites have emerged as a promising luminescent material for perovskite light-emitting diodes (Pe-LEDs). However, efficiency and stability are still obstacles to practical application due to numerous defects and inefficient energy transfer of perovskite films. Herein, functional phenethylammonium bromine-modified CsPbBr3 nanocrystals (PEA-CsPbBr3 NCs) are first introduced as multifunctional additive to simultaneously improve abovementioned problems. PEA-CsPbBr3 NCs not only serve as heteronuclear seeds and trigger growth, thus greatly reducing leakage current, but also deliver Cs+ and Br- to passivate the intrinsic defects inside film. More importantly, the PEA-CsPbBr3 construct a new carrier-transfer pathway from the small-n phase of the quasi-2D perovskite to the PEA-CsPbBr3 , which not only accelerates the energy-transfer process but also promotes radiation recombination of carriers due to stronger quantum confinement effect. Afterward, the poly(3,4-ethylenedioxythiophene):polystyrene sulfonate/poly[9,9-dioctylfluoreneco-N-[4-(3-methylpropyl)]diphenylamine]:black phosphorus quantum dot double hole-transport layer is successfully constructed to enhance its carrier-injection and charge-transport abilities. Consequently, a champion external quantum efficiency of 25.32% and maximal brightness of 128 842 cd m-2 are achieved, which is the record efficiency of the quasi-2D Pe-LED with pure green emission at 530 nm. Moreover, an impressive 174 min lifetime is obtained at T50 , which is about five times longer than the control device
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|a Journal Article
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|a PEA-CsPbBr3 NCs
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|a defect passivation
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|a energy-transfer process
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|a quasi-2D perovskites
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|a radiative recombination
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|a Liu, Yue
|e verfasserin
|4 aut
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|a Zhang, Fujun
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|a Bao, Xinyu
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|a Xu, Zehua
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|4 aut
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|a Bai, Xue
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|a Lu, Min
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|a Wu, Yanjie
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|a Wu, Zhennan
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|a Zhang, Ye
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|a Wang, Quan
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|a Gao, Xiujun
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|a Wang, Yinghui
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|a Shi, Zhifeng
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|a Hu, Junhua
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|a Yu, William W
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|a Zhang, Yu
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 43 vom: 21. Okt., Seite e2207445
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:34
|g year:2022
|g number:43
|g day:21
|g month:10
|g pages:e2207445
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|u http://dx.doi.org/10.1002/adma.202207445
|3 Volltext
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