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231226s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202207009
|2 doi
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|a pubmed24n1152.xml
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|a (DE-627)NLM345880196
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|a (NLM)36070897
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Zhang, Tao
|e verfasserin
|4 aut
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|a A Medium-Bandgap Nonfullerene Acceptor Enabling Organic Photovoltaic Cells with 30% Efficiency under Indoor Artificial Light
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|c 2022
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|a Text
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 26.10.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a The correlation between molecular structure and photovoltaic performance is lagging for constructing high-performance indoor organic photovoltaic (OPV) cells. Herein, this relationship is investigated in depth by employing two medium-bandgap nonfullerene acceptors (NFAs). The newly synthesized NFA of FTCCBr exhibits a similar bandgap and molecular energy level, but a much stronger dipole moment and larger average electrostatic potential (ESP) compared with ITCC. After blending with the polymer donor PB2, the PB2:ITCC and PB2:FTCCBr blends exhibit favorable bulk-heterojunction morphologies and the same driving force, but the PB2:FTCCBr blend exhibits a large ESP difference. In OPV cells, the PB2:ITCC-based device produces a power conversion efficiency (PCE) of 11.0%, whereas the PB2:FTCCBr-based device gives an excellent PCE of 14.8% with an open-circuit voltage (VOC ) of 1.05 V, which is the highest value among OPV cells with VOC values above 1.0 V. When both acceptor-based devices work under a 1000 lux of 3000 K light-emitting diode, the PB2:ITCC-based 1 cm2 device yields a good PCE of 25.4%; in contrast, the PB2:FTCCBr-based 1 cm2 device outputs a record PCE of 30.2%. These results suggest that a large ESP offset in photovoltaic materials is important for achieving high-performance OPV cells
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|a Journal Article
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|a electrostatic potential
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|a exciton dissociation
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|a indoor organic photovoltaic cells
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|a medium-bandgap acceptors
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|a power conversion efficiency
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|a An, Cunbin
|e verfasserin
|4 aut
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|a Xu, Ye
|e verfasserin
|4 aut
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|a Bi, Pengqing
|e verfasserin
|4 aut
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|a Chen, Zhihao
|e verfasserin
|4 aut
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|a Wang, Jingwen
|e verfasserin
|4 aut
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|a Yang, Ni
|e verfasserin
|4 aut
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|a Yang, Yi
|e verfasserin
|4 aut
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|a Xu, Bowei
|e verfasserin
|4 aut
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|a Yao, Huifeng
|e verfasserin
|4 aut
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|a Hao, Xiaotao
|e verfasserin
|4 aut
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|a Zhang, Shaoqing
|e verfasserin
|4 aut
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|a Hou, Jianhui
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 43 vom: 25. Okt., Seite e2207009
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:34
|g year:2022
|g number:43
|g day:25
|g month:10
|g pages:e2207009
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|u http://dx.doi.org/10.1002/adma.202207009
|3 Volltext
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|d 34
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|e 43
|b 25
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|h e2207009
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