Reversibly Controlled Ternary Polar States and Ferroelectric Bias Promoted by Boosting Square-Tensile-Strain

Reversibly Controlled Ternary Polar States and Ferroelectric Bias Promoted by Boosting Square-Tensile-Strain

© 2022 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 42 vom: 01. Okt., Seite e2205825
1. Verfasser: Lee, Jun Han (VerfasserIn)
Weitere Verfasser: Duong, Nguyen Xuan, Jung, Min-Hyoung, Lee, Hyun-Jae, Kim, Ahyoung, Yeo, Youngki, Kim, Junhyung, Kim, Gye-Hyeon, Cho, Byeong-Gwan, Kim, Jaegyu, Naqvi, Furqan Ul Hassan, Bae, Jong-Seong, Kim, Jeehoon, Ahn, Chang Won, Kim, Young-Min, Song, Tae Kwon, Ko, Jae-Hyeon, Koo, Tae-Yeong, Sohn, Changhee, Park, Kibog, Yang, Chan-Ho, Yang, Sang Mo, Lee, Jun Hee, Jeong, Hu Young, Kim, Tae Heon, Oh, Yoon Seok
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2022
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article BaZrO3 defect-dipoles ferroelectrics four-variants ferroelectric domains in-plane ferroelectrics new perovskite substrates switchable ferroelectric bias ternary polar states
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520 |a Interaction between dipoles often emerges intriguing physical phenomena, such as exchange bias in the magnetic heterostructures and magnetoelectric effect in multiferroics, which lead to advances in multifunctional heterostructures. However, the defect-dipole tends to be considered the undesired to deteriorate the electronic functionality. Here, deterministic switching between the ferroelectric and the pinched states by exploiting a new substrate of cubic perovskite, BaZrO3 is reported, which boosts the square-tensile-strain to BaTiO3 and promotes four-variants in-plane spontaneous polarization with oxygen vacancy creation. First-principles calculations propose a complex of an oxygen vacancy and two Ti3+ ions coins a charge-neutral defect-dipole. Cooperative control of the defect-dipole and the spontaneous polarization reveals ternary in-plane polar states characterized by biased/pinched hysteresis loops. Furthermore, it is experimentally demonstrated that three electrically controlled polar-ordering states lead to switchable and nonvolatile dielectric states for application of nondestructive electro-dielectric memory. This discovery opens a new route to develop functional materials via manipulating defect-dipoles and offers a novel platform to advance heteroepitaxy beyond the prevalent perovskite substrates 
650 4 |a Journal Article 
650 4 |a BaZrO3 
650 4 |a defect-dipoles 
650 4 |a ferroelectrics 
650 4 |a four-variants ferroelectric domains 
650 4 |a in-plane ferroelectrics 
650 4 |a new perovskite substrates 
650 4 |a switchable ferroelectric bias 
650 4 |a ternary polar states 
700 1 |a Duong, Nguyen Xuan  |e verfasserin  |4 aut 
700 1 |a Jung, Min-Hyoung  |e verfasserin  |4 aut 
700 1 |a Lee, Hyun-Jae  |e verfasserin  |4 aut 
700 1 |a Kim, Ahyoung  |e verfasserin  |4 aut 
700 1 |a Yeo, Youngki  |e verfasserin  |4 aut 
700 1 |a Kim, Junhyung  |e verfasserin  |4 aut 
700 1 |a Kim, Gye-Hyeon  |e verfasserin  |4 aut 
700 1 |a Cho, Byeong-Gwan  |e verfasserin  |4 aut 
700 1 |a Kim, Jaegyu  |e verfasserin  |4 aut 
700 1 |a Naqvi, Furqan Ul Hassan  |e verfasserin  |4 aut 
700 1 |a Bae, Jong-Seong  |e verfasserin  |4 aut 
700 1 |a Kim, Jeehoon  |e verfasserin  |4 aut 
700 1 |a Ahn, Chang Won  |e verfasserin  |4 aut 
700 1 |a Kim, Young-Min  |e verfasserin  |4 aut 
700 1 |a Song, Tae Kwon  |e verfasserin  |4 aut 
700 1 |a Ko, Jae-Hyeon  |e verfasserin  |4 aut 
700 1 |a Koo, Tae-Yeong  |e verfasserin  |4 aut 
700 1 |a Sohn, Changhee  |e verfasserin  |4 aut 
700 1 |a Park, Kibog  |e verfasserin  |4 aut 
700 1 |a Yang, Chan-Ho  |e verfasserin  |4 aut 
700 1 |a Yang, Sang Mo  |e verfasserin  |4 aut 
700 1 |a Lee, Jun Hee  |e verfasserin  |4 aut 
700 1 |a Jeong, Hu Young  |e verfasserin  |4 aut 
700 1 |a Kim, Tae Heon  |e verfasserin  |4 aut 
700 1 |a Oh, Yoon Seok  |e verfasserin  |4 aut 
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773 1 8 |g volume:34  |g year:2022  |g number:42  |g day:01  |g month:10  |g pages:e2205825 
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