Ultrathin Piezoelectric Resonators Based on Graphene and Free-Standing Single-Crystal BaTiO3

Ultrathin Piezoelectric Resonators Based on Graphene and Free-Standing Single-Crystal BaTiO3

© 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 44 vom: 15. Nov., Seite e2204630
1. Verfasser: Lee, Martin (VerfasserIn)
Weitere Verfasser: Renshof, Johannes R, van Zeggeren, Kasper J, Houmes, Maurits J A, Lesne, Edouard, Šiškins, Makars, van Thiel, Thierry C, Guis, Ruben H, van Blankenstein, Mark R, Verbiest, Gerard J, Caviglia, Andrea D, van der Zant, Herre S J, Steeneken, Peter G
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2022
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D materials actuators complex oxides ferroelectrics nano-electromechanical systems piezoelectrics resonators
Beschreibung
Zusammenfassung:© 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH.
Suspended piezoelectric thin films are key elements enabling high-frequency filtering in telecommunication devices. To meet the requirements of next-generation electronics, it is essential to reduce device thickness for reaching higher resonance frequencies. Here, the high-quality mechanical and electrical properties of graphene electrodes are combined with the strong piezoelectric performance of the free-standing complex oxide, BaTiO3 (BTO), to create ultrathin piezoelectric resonators. It is demonstrated that the device can be brought into mechanical resonance by piezoelectric actuation. By sweeping the DC bias voltage on the top graphene electrode, the BTO membrane is switched between the two poled ferroelectric states. Remarkably, ferroelectric hysteresis is also observed in the resonance frequency, magnitude and Q-factor of the first membrane mode. In the bulk acoustic mode, the device vibrates at 233 GHz. This work demonstrates the potential of combining van der Waals materials with complex oxides for next-generation electronics, which not only opens up opportunities for increasing filter frequencies, but also enables reconfiguration by poling, via ferroelectric memory effect
Beschreibung:Date Revised 04.11.2022
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202204630