Recycled Bifunctional Heterostructure Material : g-GaN/SnS for Photocatalytic Decomposition of Water and Efficient Detection of NO2

Recently, the energy crisis and environmental pollution problems have become increasingly severe. There is an urgent need to develop a class of multifunctional materials that can both produce clean energy and detect harmful gases. Herein, we propose a g-GaN/SnS heterostructure and explored its dual-...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 38(2022), 35 vom: 06. Sept., Seite 10886-10892
1. Verfasser: Zhu, Hua (VerfasserIn)
Weitere Verfasser: Shen, Yang, Zhang, Qihao, Fang, Qianglong, Chen, Liang, Yang, Xiaodong, Wang, Baolin
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2022
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article
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520 |a Recently, the energy crisis and environmental pollution problems have become increasingly severe. There is an urgent need to develop a class of multifunctional materials that can both produce clean energy and detect harmful gases. Herein, we propose a g-GaN/SnS heterostructure and explored its dual-optimal performance in photocatalytic hydrogen production and gas detection. Our results demonstrated that the g-GaN/SnS heterostructure has a suitable type II band alignment and excellent absorption in the visible range, which both indicate its potential application in photocatalysis. Furthermore, when the g-GaN/SnS heterostructure acted as a gas detection material, it was consistently susceptible to NO2 gas molecules, according to charge transfer. Additionally, it has a very suitable material recovery time (∼0.5 h) when used for NO2 detection, illustrating the recyclability of the material. Interestingly, the applied electric field of -0.4 V/Å can greatly increase the absorption coefficient in the visible range to 150% of the original. Also, the applied electric field of 0.6 V/Å can substantially enhance the gas detection sensitivity by 27% compared to the case without the electric field. Thus, the g-GaN/SnS heterostructure we proposed not only has the advantage of being bifunctional but also has the potential to be recycled 
650 4 |a Journal Article 
700 1 |a Shen, Yang  |e verfasserin  |4 aut 
700 1 |a Zhang, Qihao  |e verfasserin  |4 aut 
700 1 |a Fang, Qianglong  |e verfasserin  |4 aut 
700 1 |a Chen, Liang  |e verfasserin  |4 aut 
700 1 |a Yang, Xiaodong  |e verfasserin  |4 aut 
700 1 |a Wang, Baolin  |e verfasserin  |4 aut 
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