Fully Depleted Self-Aligned Heterosandwiched Van Der Waals Photodetectors

© 2022 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 39 vom: 01. Sept., Seite e2203283
1. Verfasser: Wang, Fang (VerfasserIn)
Weitere Verfasser: Liu, Zhiyi, Zhang, Tao, Long, Mingsheng, Wang, Xiuxiu, Xie, Runzhang, Ge, Haonan, Wang, Hao, Hou, Jie, Gu, Yue, Hu, Xin, Song, Ze, Wang, Suofu, Dong, Qingsong, Liao, Kecai, Tu, Yubing, Han, Tao, Li, Feng, Zhang, Zongyuan, Hou, Xingyuan, Wang, Shaoliang, Li, Liang, Zhang, Xueao, Zhao, Dongxu, Shan, Chongxin, Shan, Lei, Hu, Weida
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2022
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D materials black phosphorus molybdenum disulfide photodetectors van der Waals heterojunctions
LEADER 01000naa a22002652 4500
001 NLM344915123
003 DE-627
005 20231226023852.0
007 cr uuu---uuuuu
008 231226s2022 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.202203283  |2 doi 
028 5 2 |a pubmed24n1149.xml 
035 |a (DE-627)NLM344915123 
035 |a (NLM)35972840 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Wang, Fang  |e verfasserin  |4 aut 
245 1 0 |a Fully Depleted Self-Aligned Heterosandwiched Van Der Waals Photodetectors 
264 1 |c 2022 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Revised 28.09.2022 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2022 Wiley-VCH GmbH. 
520 |a Room-temperature-operating highly sensitive mid-wavelength infrared (MWIR) photodetectors are utilized in a large number of important applications, including night vision, communications, and optical radar. Many previous studies have demonstrated uncooled MWIR photodetectors using 2D narrow-bandgap semiconductors. To date, most of these works have utilized atomically thin flakes, simple van der Waals (vdW) heterostructures, or atomically thin p-n junctions as absorbers, which have difficulty in meeting the requirements for state-of-the-art MWIR photodetectors with a blackbody response. Here, a fully depleted self-aligned MoS2 -BP-MoS2 vdW heterostructure sandwiched between two electrodes is reported. This new type of photodetector exhibits competitive performance, including a high blackbody peak photoresponsivity up to 0.77 A W-1 and low noise-equivalent power of 2.0 × 10-14  W Hz-1/2 , in the MWIR region. A peak specific detectivity of 8.61 × 1010  cm Hz1/2  W-1 under blackbody radiation is achieved at room temperature in the MWIR region. Importantly, the effective detection range of the device is twice that of state-of-the-art MWIR photodetectors. Furthermore, the device presents an ultrafast response of ≈4 µs both in the visible and short-wavelength infrared bands. These results provide an ideal platform for realizing broadband and highly sensitive room-temperature MWIR photodetectors 
650 4 |a Journal Article 
650 4 |a 2D materials 
650 4 |a black phosphorus 
650 4 |a molybdenum disulfide 
650 4 |a photodetectors 
650 4 |a van der Waals heterojunctions 
700 1 |a Liu, Zhiyi  |e verfasserin  |4 aut 
700 1 |a Zhang, Tao  |e verfasserin  |4 aut 
700 1 |a Long, Mingsheng  |e verfasserin  |4 aut 
700 1 |a Wang, Xiuxiu  |e verfasserin  |4 aut 
700 1 |a Xie, Runzhang  |e verfasserin  |4 aut 
700 1 |a Ge, Haonan  |e verfasserin  |4 aut 
700 1 |a Wang, Hao  |e verfasserin  |4 aut 
700 1 |a Hou, Jie  |e verfasserin  |4 aut 
700 1 |a Gu, Yue  |e verfasserin  |4 aut 
700 1 |a Hu, Xin  |e verfasserin  |4 aut 
700 1 |a Song, Ze  |e verfasserin  |4 aut 
700 1 |a Wang, Suofu  |e verfasserin  |4 aut 
700 1 |a Dong, Qingsong  |e verfasserin  |4 aut 
700 1 |a Liao, Kecai  |e verfasserin  |4 aut 
700 1 |a Tu, Yubing  |e verfasserin  |4 aut 
700 1 |a Han, Tao  |e verfasserin  |4 aut 
700 1 |a Li, Feng  |e verfasserin  |4 aut 
700 1 |a Zhang, Zongyuan  |e verfasserin  |4 aut 
700 1 |a Hou, Xingyuan  |e verfasserin  |4 aut 
700 1 |a Wang, Shaoliang  |e verfasserin  |4 aut 
700 1 |a Li, Liang  |e verfasserin  |4 aut 
700 1 |a Zhang, Xueao  |e verfasserin  |4 aut 
700 1 |a Zhao, Dongxu  |e verfasserin  |4 aut 
700 1 |a Shan, Chongxin  |e verfasserin  |4 aut 
700 1 |a Shan, Lei  |e verfasserin  |4 aut 
700 1 |a Hu, Weida  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 34(2022), 39 vom: 01. Sept., Seite e2203283  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:34  |g year:2022  |g number:39  |g day:01  |g month:09  |g pages:e2203283 
856 4 0 |u http://dx.doi.org/10.1002/adma.202203283  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 34  |j 2022  |e 39  |b 01  |c 09  |h e2203283