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|a 10.1002/adma.202203283
|2 doi
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|a pubmed24n1149.xml
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|a (DE-627)NLM344915123
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|a (NLM)35972840
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Wang, Fang
|e verfasserin
|4 aut
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|a Fully Depleted Self-Aligned Heterosandwiched Van Der Waals Photodetectors
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|c 2022
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|a Text
|b txt
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 28.09.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Room-temperature-operating highly sensitive mid-wavelength infrared (MWIR) photodetectors are utilized in a large number of important applications, including night vision, communications, and optical radar. Many previous studies have demonstrated uncooled MWIR photodetectors using 2D narrow-bandgap semiconductors. To date, most of these works have utilized atomically thin flakes, simple van der Waals (vdW) heterostructures, or atomically thin p-n junctions as absorbers, which have difficulty in meeting the requirements for state-of-the-art MWIR photodetectors with a blackbody response. Here, a fully depleted self-aligned MoS2 -BP-MoS2 vdW heterostructure sandwiched between two electrodes is reported. This new type of photodetector exhibits competitive performance, including a high blackbody peak photoresponsivity up to 0.77 A W-1 and low noise-equivalent power of 2.0 × 10-14 W Hz-1/2 , in the MWIR region. A peak specific detectivity of 8.61 × 1010 cm Hz1/2 W-1 under blackbody radiation is achieved at room temperature in the MWIR region. Importantly, the effective detection range of the device is twice that of state-of-the-art MWIR photodetectors. Furthermore, the device presents an ultrafast response of ≈4 µs both in the visible and short-wavelength infrared bands. These results provide an ideal platform for realizing broadband and highly sensitive room-temperature MWIR photodetectors
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|a Journal Article
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|a 2D materials
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|a black phosphorus
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|a molybdenum disulfide
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|a photodetectors
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|a van der Waals heterojunctions
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|a Liu, Zhiyi
|e verfasserin
|4 aut
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|a Zhang, Tao
|e verfasserin
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|a Long, Mingsheng
|e verfasserin
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|a Wang, Xiuxiu
|e verfasserin
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|a Xie, Runzhang
|e verfasserin
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|a Ge, Haonan
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|a Wang, Hao
|e verfasserin
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|a Hou, Jie
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|a Gu, Yue
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|a Hu, Xin
|e verfasserin
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|a Song, Ze
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|a Wang, Suofu
|e verfasserin
|4 aut
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|a Dong, Qingsong
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|a Liao, Kecai
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|4 aut
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|a Tu, Yubing
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|a Han, Tao
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|a Li, Feng
|e verfasserin
|4 aut
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|a Zhang, Zongyuan
|e verfasserin
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|a Hou, Xingyuan
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|4 aut
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|a Wang, Shaoliang
|e verfasserin
|4 aut
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|a Li, Liang
|e verfasserin
|4 aut
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|a Zhang, Xueao
|e verfasserin
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|a Zhao, Dongxu
|e verfasserin
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|a Shan, Chongxin
|e verfasserin
|4 aut
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|a Shan, Lei
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|a Hu, Weida
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 39 vom: 01. Sept., Seite e2203283
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:34
|g year:2022
|g number:39
|g day:01
|g month:09
|g pages:e2203283
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|u http://dx.doi.org/10.1002/adma.202203283
|3 Volltext
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|d 34
|j 2022
|e 39
|b 01
|c 09
|h e2203283
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