Approaching the External Quantum Efficiency Limit in 2D Photovoltaic Devices

Approaching the External Quantum Efficiency Limit in 2D Photovoltaic Devices

© 2022 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 39 vom: 11. Sept., Seite e2206122
1. Verfasser: Wang, Haoyun (VerfasserIn)
Weitere Verfasser: Wang, Wei, Zhong, Yongle, Li, Dongyan, Li, Zexin, Xu, Xiang, Song, Xingyu, Chen, Yunxin, Huang, Pu, Mei, Anyi, Han, Hongwei, Zhai, Tianyou, Zhou, Xing
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2022
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D materials Schottky diodes photovoltaics transferred electrodes van der Waals integration
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520 |a 2D transition metal dichalcogenides (TMDs) are promising candidates for realizing ultrathin and high-performance photovoltaic devices. However, the external quantum efficiency (EQE) and power conversion efficiency (PCE) of most 2D photovoltaic devices face great challenges in exceeding 50% and 3%, respectively, due to the low efficiency of photocarrier separation and collection. Here, this study demonstrates photovoltaic devices with defect-free interface and recombination-free channel based on 2D WS2 , showing high EQE of 92% approaching the theoretical limit and high PCE of 5.0%. The high performances are attributed to the van der Waals metal contact without interface defects and Fermi-level pinning, and the fully depleted channel without photocarrier recombination, leading to intrinsic photocarrier separation and collection with high efficiency. Furthermore, this study demonstrates that the strategy can be extended to other TMDs such as MoSe2 and WSe2 with EQE of 92% and 94%, respectively. This work proposes a universal strategy for building high-performance 2D photovoltaic devices. The nearly ideal EQE provides great potential for PCE approaching the Shockley-Queisser limit 
650 4 |a Journal Article 
650 4 |a 2D materials 
650 4 |a Schottky diodes 
650 4 |a photovoltaics 
650 4 |a transferred electrodes 
650 4 |a van der Waals integration 
700 1 |a Wang, Wei  |e verfasserin  |4 aut 
700 1 |a Zhong, Yongle  |e verfasserin  |4 aut 
700 1 |a Li, Dongyan  |e verfasserin  |4 aut 
700 1 |a Li, Zexin  |e verfasserin  |4 aut 
700 1 |a Xu, Xiang  |e verfasserin  |4 aut 
700 1 |a Song, Xingyu  |e verfasserin  |4 aut 
700 1 |a Chen, Yunxin  |e verfasserin  |4 aut 
700 1 |a Huang, Pu  |e verfasserin  |4 aut 
700 1 |a Mei, Anyi  |e verfasserin  |4 aut 
700 1 |a Han, Hongwei  |e verfasserin  |4 aut 
700 1 |a Zhai, Tianyou  |e verfasserin  |4 aut 
700 1 |a Zhou, Xing  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 34(2022), 39 vom: 11. Sept., Seite e2206122  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:34  |g year:2022  |g number:39  |g day:11  |g month:09  |g pages:e2206122 
856 4 0 |u http://dx.doi.org/10.1002/adma.202206122  |3 Volltext 
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