|
|
|
|
| LEADER |
01000caa a22002652c 4500 |
| 001 |
NLM344200310 |
| 003 |
DE-627 |
| 005 |
20250303153859.0 |
| 007 |
cr uuu---uuuuu |
| 008 |
231226s2022 xx |||||o 00| ||eng c |
| 024 |
7 |
|
|a 10.1002/adma.202203954
|2 doi
|
| 028 |
5 |
2 |
|a pubmed25n1147.xml
|
| 035 |
|
|
|a (DE-627)NLM344200310
|
| 035 |
|
|
|a (NLM)35900293
|
| 040 |
|
|
|a DE-627
|b ger
|c DE-627
|e rakwb
|
| 041 |
|
|
|a eng
|
| 100 |
1 |
|
|a Raghuwanshi, Mohit
|e verfasserin
|4 aut
|
| 245 |
1 |
0 |
|a Fingerprints Indicating Superior Properties of Internal Interfaces in Cu(In,Ga)Se2 Thin-Film Solar Cells
|
| 264 |
|
1 |
|c 2022
|
| 336 |
|
|
|a Text
|b txt
|2 rdacontent
|
| 337 |
|
|
|a ƒaComputermedien
|b c
|2 rdamedia
|
| 338 |
|
|
|a ƒa Online-Ressource
|b cr
|2 rdacarrier
|
| 500 |
|
|
|a Date Revised 15.09.2022
|
| 500 |
|
|
|a published: Print-Electronic
|
| 500 |
|
|
|a Citation Status PubMed-not-MEDLINE
|
| 520 |
|
|
|a © 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH.
|
| 520 |
|
|
|a Growth of Cu(In,Ga)Se2 (CIGS) absorbers under Cu-poor conditions gives rise to incorporation of numerous defects into the bulk, whereas the same absorber grown under Cu-rich conditions leads to a stoichiometric bulk with minimum defects. This suggests that CIGS absorbers grown under Cu-rich conditions are more suitable for solar cell applications. However, the CIGS solar cell devices with record efficiencies have all been fabricated under Cu-poor conditions, despite the expectations. Therefore, in the present work, both Cu-poor and Cu-rich CIGS cells are investigated, and the superior properties of the internal interfaces of the Cu-poor CIGS cells, such as the p-n junction and grain boundaries, which always makes them the record-efficiency devices, are shown. More precisely, by employing a correlative microscopy approach, the typical fingerprints for superior properties of internal interfaces necessary for maintaining a lower recombination activity in the cell is discovered. These are a Cu-depleted and Cd-enriched CIGS absorber surface, near the p-n junction, as well as a negative Cu factor (∆β) and high Na content (>1.5 at%) at the grain boundaries. Thus, this work provides key factors governing the device performance (efficiency), which can be considered in the design of next-generation solar cells
|
| 650 |
|
4 |
|a Journal Article
|
| 650 |
|
4 |
|a CIGS solar cells
|
| 650 |
|
4 |
|a Cu-poor Cu(In,Ga)Se2
|
| 650 |
|
4 |
|a Cu-rich Cu(In,Ga)Se2
|
| 650 |
|
4 |
|a device simulations
|
| 650 |
|
4 |
|a grain boundaries
|
| 650 |
|
4 |
|a p-n junctions
|
| 700 |
1 |
|
|a Chugh, Manjusha
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Sozzi, Giovanna
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Kanevce, Ana
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Kühne, Thomas D
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Mirhosseini, Hossein
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Wuerz, Roland
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Cojocaru-Mirédin, Oana
|e verfasserin
|4 aut
|
| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 37 vom: 20. Sept., Seite e2203954
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
|
| 773 |
1 |
8 |
|g volume:34
|g year:2022
|g number:37
|g day:20
|g month:09
|g pages:e2203954
|
| 856 |
4 |
0 |
|u http://dx.doi.org/10.1002/adma.202203954
|3 Volltext
|
| 912 |
|
|
|a GBV_USEFLAG_A
|
| 912 |
|
|
|a SYSFLAG_A
|
| 912 |
|
|
|a GBV_NLM
|
| 912 |
|
|
|a GBV_ILN_350
|
| 951 |
|
|
|a AR
|
| 952 |
|
|
|d 34
|j 2022
|e 37
|b 20
|c 09
|h e2203954
|