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231226s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202205678
|2 doi
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|a pubmed24n1145.xml
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|a (DE-627)NLM343735725
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|a DE-627
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|a eng
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|a Chen, Jiangchun
|e verfasserin
|4 aut
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|a Low-Temperature High-Areal-Capacity Rechargeable Potassium-Metal Batteries
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|c 2022
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|a Text
|b txt
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 08.09.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a High mass loading and high areal capacity are key metrics for commercial batteries, which are usually limited by the large charge-transfer impedance in thick electrodes. This can be kinetically deteriorated under low temperatures, and the realization of high-areal-capacity batteries in cold climates remains challenging. Herein, a low-temperature high-areal-capacity rechargeable potassium-tellurium (K-Te) battery is successfully fabricated by knocking down the kinetic barriers in the cathode and pairing it with stable anode. Specifically, the in situ electrochemical self-reconstruction of amorphous Cu1.4 Te in a thick electrode is realized simply by coating micro-sized Te on the Cu collector, significantly improving its ionic conductivity. Meanwhile, the optimized electrolyte enables fast ion transportation and a stable K-metal anode at a large current density and areal capacity. Consequently, this K-Te battery achieves a high areal capacity of 1.25 mAh cm-2 at -40 °C, which greatly exceeds those of most reported works. This work highlights the significance of electrode design and electrolyte engineering for high areal capacity at low temperatures, and represents a critical step toward practical applications of low-temperature batteries
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|a Journal Article
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|a areal capacity
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|a high mass loading
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|a low temperature battery operation
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|a potassium-metal batteries
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|a tellurium
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1 |
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|a Yu, Dandan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhu, Qiaonan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Xiaozhi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Jiawei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Wenxing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ji, Runa
|e verfasserin
|4 aut
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1 |
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|a Qiu, Keliang
|e verfasserin
|4 aut
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1 |
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|a Guo, Lin
|e verfasserin
|4 aut
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| 700 |
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|a Wang, Hua
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 36 vom: 22. Sept., Seite e2205678
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:34
|g year:2022
|g number:36
|g day:22
|g month:09
|g pages:e2205678
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|u http://dx.doi.org/10.1002/adma.202205678
|3 Volltext
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