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|a 10.1002/adma.202204779
|2 doi
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|a pubmed24n1144.xml
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|a (DE-627)NLM343365804
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|a (NLM)35816107
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|a DE-627
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|a eng
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|a Gao, Zhao-Yan
|e verfasserin
|4 aut
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|a Experimental Realization of Atomic Monolayer Si9 C15
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|c 2022
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|a Text
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 07.09.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Monolayer Six Cy constitutes an important family of 2D materials that is predicted to feature a honeycomb structure and appreciable bandgaps. However, due to its binary chemical nature and the lack of bulk polymorphs with a layered structure, the fabrication of such materials has so far been challenging. Here, the synthesis of atomic monolayer Si9 C15 on Ru (0001) and Rh(111) substrates is reported. A combination of scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), scanning transmission electron microscopy (STEM), and density functional theory (DFT) calculations is used to infer that the 2D lattice of Si9 C15 is a buckled honeycomb structure. Monolayer Si9 C15 shows semiconducting behavior with a bandgap of ≈1.9 eV. Remarkably, the Si9 C15 lattice remains intact after exposure to ambient conditions, indicating good air stability. The present work expands the 2D-materials library and provides a promising platform for future studies in nanoelectronics and nanophotonics
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|a Journal Article
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|a 2D materials
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|a Si9C15 monolayers
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|a SixCy
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|a air-stable materials
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|a honeycomb structures
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|a Xu, Wenpeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gao, Yixuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Guzman, Roger
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Guo, Hui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Xueyan
|e verfasserin
|4 aut
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|a Zheng, Qi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhu, Zhili
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Yu-Yang
|e verfasserin
|4 aut
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| 700 |
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|a Lin, Xiao
|e verfasserin
|4 aut
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| 700 |
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|a Huan, Qing
|e verfasserin
|4 aut
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| 700 |
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|a Li, Geng
|e verfasserin
|4 aut
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| 700 |
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|a Zhang, Lizhi
|e verfasserin
|4 aut
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|a Zhou, Wu
|e verfasserin
|4 aut
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| 700 |
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|a Gao, Hong-Jun
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 35 vom: 20. Sept., Seite e2204779
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:34
|g year:2022
|g number:35
|g day:20
|g month:09
|g pages:e2204779
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|u http://dx.doi.org/10.1002/adma.202204779
|3 Volltext
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