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231226s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202109449
|2 doi
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|a pubmed24n1142.xml
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|a (DE-627)NLM342724908
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|a (NLM)35751473
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|a DE-627
|b ger
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|a eng
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|a Xie, Qidong
|e verfasserin
|4 aut
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|a Rashba-Edelstein Effect in the h-BN Van Der Waals Interface for Magnetization Switching
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 18.08.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Van der Waals materials are attracting great attention in the field of spintronics due to their novel physical properties. For example, they are utilized as spin-current generating materials in spin-orbit torque (SOT) devices, which offers an electrical way to control the magnetic state and is promising for future low-power electronics. However, SOTs have mostly been demonstrated in vdW materials with strong spin-orbit coupling (SOC). Here, the observation of a current-induced SOT in the h-BN/SrRuO3 bilayer structure is reported, where the vdW material (h-BN) is an insulator with negligible SOC. Importantly, this SOT is strong enough to induce the switching of the perpendicular magnetization in SrRuO3 . First-principles calculations suggest a giant Rashba effect at the interface between vdW material and SrRuO3 (110)pc thin film, which leads to the observed SOT based on a simplified tight-binding model. Furthermore, it is demonstrated that the current-induced magnetization switching can be modulated by the electric field. This study paves the way for exploring the current-induced SOT and magnetization switching by integrating vdW materials with ferromagnets
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|a Journal Article
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|a light elements
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|a orbital hybridization
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|a spin-orbit torque
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|a van der Waals materials
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|a Lin, Weinan
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|a Liang, Jinghua
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|a Zhou, Hengan
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|a Waqar, Moaz
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|a Lin, Ming
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|a Teo, Siew Lang
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|a Chen, Hao
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|a Lu, Xiufang
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|a Shu, Xinyu
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|a Liu, Liang
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|a Chen, Shaohai
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|a Zhou, Chenghang
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|a Chai, Jianwei
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|a Yang, Ping
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|a Loh, Kian Ping
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|a Wang, John
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|a Jiang, Wanjun
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|a Manchon, Aurelien
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|a Yang, Hongxin
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|a Chen, Jingsheng
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 33 vom: 12. Aug., Seite e2109449
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:34
|g year:2022
|g number:33
|g day:12
|g month:08
|g pages:e2109449
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|u http://dx.doi.org/10.1002/adma.202109449
|3 Volltext
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