Pass-Transistor Logic Circuits Based on Wafer-Scale 2D Semiconductors

Pass-Transistor Logic Circuits Based on Wafer-Scale 2D Semiconductors

© 2022 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 48 vom: 13. Dez., Seite e2202472
1. Verfasser: Wang, Xinyu (VerfasserIn)
Weitere Verfasser: Chen, Xinyu, Ma, Jingyi, Gou, Saifei, Guo, Xiaojiao, Tong, Ling, Zhu, Junqiang, Xia, Yin, Wang, Die, Sheng, Chuming, Chen, Honglei, Sun, Zhengzong, Ma, Shunli, Riaud, Antoine, Xu, Zihan, Cong, Chunxiao, Qiu, Zhijun, Zhou, Peng, Xie, Yufeng, Bian, Lifeng, Bao, Wenzhong
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2022
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D semiconductors complementary pass-transistor logic integrated circuits molybdenum disulfide (MoS2) pseudo-NMOS logic gates
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520 |a 2D semiconductors, such as molybdenum disulfide (MoS2 ), have attracted tremendous attention in constructing advanced monolithic integrated circuits (ICs) for future flexible and energy-efficient electronics. However, the development of large-scale ICs based on 2D materials is still in its early stage, mainly due to the non-uniformity of the individual devices and little investigation of device and circuit-level optimization. Herein, a 4-inch high-quality monolayer MoS2 film is successfully synthesized, which is then used to fabricate top-gated (TG) MoS2 field-effect transistors with wafer-scale uniformity. Some basic circuits such as static random access memory and ring oscillators are examined. A pass-transistor logic configuration based on pseudo-NMOS is then employed to design more complex MoS2 logic circuits, which are successfully fabricated with proper logic functions tested. These preliminary integration efforts show the promising potential of wafer-scale 2D semiconductors for application in complex ICs 
650 4 |a Journal Article 
650 4 |a 2D semiconductors 
650 4 |a complementary pass-transistor logic 
650 4 |a integrated circuits 
650 4 |a molybdenum disulfide (MoS2) 
650 4 |a pseudo-NMOS logic gates 
700 1 |a Chen, Xinyu  |e verfasserin  |4 aut 
700 1 |a Ma, Jingyi  |e verfasserin  |4 aut 
700 1 |a Gou, Saifei  |e verfasserin  |4 aut 
700 1 |a Guo, Xiaojiao  |e verfasserin  |4 aut 
700 1 |a Tong, Ling  |e verfasserin  |4 aut 
700 1 |a Zhu, Junqiang  |e verfasserin  |4 aut 
700 1 |a Xia, Yin  |e verfasserin  |4 aut 
700 1 |a Wang, Die  |e verfasserin  |4 aut 
700 1 |a Sheng, Chuming  |e verfasserin  |4 aut 
700 1 |a Chen, Honglei  |e verfasserin  |4 aut 
700 1 |a Sun, Zhengzong  |e verfasserin  |4 aut 
700 1 |a Ma, Shunli  |e verfasserin  |4 aut 
700 1 |a Riaud, Antoine  |e verfasserin  |4 aut 
700 1 |a Xu, Zihan  |e verfasserin  |4 aut 
700 1 |a Cong, Chunxiao  |e verfasserin  |4 aut 
700 1 |a Qiu, Zhijun  |e verfasserin  |4 aut 
700 1 |a Zhou, Peng  |e verfasserin  |4 aut 
700 1 |a Xie, Yufeng  |e verfasserin  |4 aut 
700 1 |a Bian, Lifeng  |e verfasserin  |4 aut 
700 1 |a Bao, Wenzhong  |e verfasserin  |4 aut 
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773 1 8 |g volume:34  |g year:2022  |g number:48  |g day:13  |g month:12  |g pages:e2202472 
856 4 0 |u http://dx.doi.org/10.1002/adma.202202472  |3 Volltext 
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